CXMS5222 CXMS5222-N串联N沟道增强型场效应晶体管，采用高密度DMOS沟道技术制造，特别用于减小导通电阻。这种器件特别适合低压应用，并且在一个非常小的外形表面安装包中具有低功耗。超低导通电阻高密度电池设计
-
[ CXMS5222 ]
目录
产品概述 返回TOP
CXMS5222M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
产品特点 返回TOP
30V/5.8A
RDS(ON) =25mΩ@ VGS=10V, ID=5.8A
RDS(ON) =28mΩ@ VGS=4.5V, ID=5A
RDS(ON) =37mΩ@ VGS=2.5V, ID=4A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
应用范围 返回TOP
Battery management
High speed switch
Low power DC to DC converter
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
a
相关芯片选择指南 返回TOP 更多同类产品........
|
MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) |
|||||||
|
Part |
Mode |
VDS(Max) |
VGS |
ID(Max) |
RDS(on) |
Application |
Package |
|
N channel |
20V |
12V |
5.2A |
37mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
N channel |
20V |
8V |
3A |
22mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
N channel |
20V |
12V |
5.2A |
29mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
Double N |
20V |
12V |
6A |
22mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
N channel |
30V |
12V |
5.8A |
25mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
N channel |
30V |
20V |
4.4A |
35mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
Double N |
20V |
12V |
6A |
21mΩ |
①②③④⑤ |
SOT23-6/ TSSOP8 |
|
|
Double N |
20V |
12V |
5A |
19mΩ |
①②③④⑤⑥⑦⑧ |
TSSOP8/SOT26 |
|
|
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection |
|||||||
| 热门信息 |
|---|
| 最新信息 |
|---|
| 推荐信息 |
|---|
