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首页 > 产品中心 > 功率器件 > N沟道MOSFETs >CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
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The CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
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1.产品概述       2.产品特点     dYf嘉泰姆

3.应用范围       4.技术规格书下载(PDF文档)dYf嘉泰姆

5.产品封装       6.电路原理图  dYf嘉泰姆

7.相关产品dYf嘉泰姆

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The CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

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●Notebook PCs dYf嘉泰姆

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●On-board power supplies dYf嘉泰姆

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     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!dYf嘉泰姆

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产品封装图 返回TOPdYf嘉泰姆


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电路原理图 返回TOPdYf嘉泰姆


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功率MOSFET  N沟道

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SOT23dYf嘉泰姆

 

0.13dYf嘉泰姆

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150dYf嘉泰姆

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4.5dYf嘉泰姆

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SOT23dYf嘉泰姆

0.16dYf嘉泰姆

0.075dYf嘉泰姆

0.1dYf嘉泰姆

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1.4dYf嘉泰姆

180dYf嘉泰姆

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12dYf嘉泰姆

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2.5dYf嘉泰姆

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SOT23dYf嘉泰姆

0.14dYf嘉泰姆

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0.075dYf嘉泰姆

0.105dYf嘉泰姆

1dYf嘉泰姆

2.5dYf嘉泰姆

270dYf嘉泰姆

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4dYf嘉泰姆

4.5dYf嘉泰姆

CXCN5398A1265PRdYf嘉泰姆

SOT89dYf嘉泰姆

0.095dYf嘉泰姆

0.042dYf嘉泰姆

0.055dYf嘉泰姆

0.7dYf嘉泰姆

1.4dYf嘉泰姆

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0.037dYf嘉泰姆

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