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首页 > 产品中心 > 功率器件 > N沟道MOSFETs >The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy
The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy
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The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy
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The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

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