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首页 > 产品中心 > 功率器件 > N沟道MOSFETs >The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy
The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy
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The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics the IC can be efficiently set thereby saving energy
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The CXCN5397A11BOMR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

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●Notebook PCs 0Yx嘉泰姆

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     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!0Yx嘉泰姆

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功率MOSFET  N沟道

产品名称0Yx嘉泰姆

封装0Yx嘉泰姆

Rds0Yx嘉泰姆

(ON) (Ω) Vgs=2.5V MAX0Yx嘉泰姆

Rds0Yx嘉泰姆

(ON) (Ω) Vgs=4.5V 0Yx嘉泰姆

Rds0Yx嘉泰姆

(ON) (Ω) Vgs=4.5V MAX0Yx嘉泰姆

Vgsoff0Yx嘉泰姆

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Vgs0Yx嘉泰姆

off(V) MAX0Yx嘉泰姆

Ciss0Yx嘉泰姆

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CXCN5397A11BOMR0Yx嘉泰姆

SOT230Yx嘉泰姆

 

0.130Yx嘉泰姆

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0.070Yx嘉泰姆

0.0370Yx嘉泰姆

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