The CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
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[ CXCN5397A12B2MR ]
目录
7.相关产品
产品概述 返回TOP
The CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
产品特点 返回TOP
应用范围 返回TOP
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
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产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品........
| 功率MOSFET N沟道 | |||||||||||
|
产品名称 |
封装 |
Rds (ON) (Ω) Vgs=2.5V MAX |
Rds (ON) (Ω) Vgs=4.5V |
Rds (ON) (Ω) Vgs=4.5V MAX |
Vgsoff V MIN |
Vgs off(V) MAX |
Ciss pF |
Vdss V |
Vgss (V) |
Id (A) |
驱动 电压 (V) |
|
SOT23 |
0.13 |
0.17 |
1 |
3 |
150 |
30 |
20 |
1 |
4.5 |
||
|
SOT23 |
0.16 |
0.075 |
0.1 |
0.7 |
1.4 |
180 |
20 |
12 |
1 |
2.5 |
|
|
SOT23 |
0.14 |
0.075 |
0.1 |
0.5 |
1.2 |
220 |
20 |
8 |
1 |
1.5 |
|
|
SOT89 |
0.075 |
0.105 |
1 |
2.5 |
270 |
30 |
20 |
4 |
4.5 |
||
|
SOT89 |
0.095 |
0.042 |
0.055 |
0.7 |
1.4 |
320 |
20 |
12 |
4 |
2.5 |
|
|
SOT89 |
0.07 |
0.037 |
0.05 |
0.5 |
1.2 |
390 |
20 |
8 |
4 |
1.5 |
|
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