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首页 > 产品中心 > 功率器件 > N沟道MOSFETs >CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
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The CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
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1.产品概述       2.产品特点     iE5嘉泰姆

3.应用范围       4.技术规格书下载(PDF文档)iE5嘉泰姆

5.产品封装       6.电路原理图  iE5嘉泰姆

7.相关产品iE5嘉泰姆

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The CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

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●Notebook PCs iE5嘉泰姆

●Cellular and portable phones iE5嘉泰姆

●On-board power supplies iE5嘉泰姆

●Li-ion battery systemsiE5嘉泰姆

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     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!iE5嘉泰姆

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功率MOSFET  N沟道

产品名称iE5嘉泰姆

封装iE5嘉泰姆

RdsiE5嘉泰姆

(ON) (Ω) Vgs=2.5V MAXiE5嘉泰姆

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(ON) (Ω) Vgs=4.5V iE5嘉泰姆

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(ON) (Ω) Vgs=4.5V MAXiE5嘉泰姆

VgsoffiE5嘉泰姆

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电压iE5嘉泰姆

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CXCN5397A11BOMRiE5嘉泰姆

SOT23iE5嘉泰姆

 

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CXCN5397A12B2MRiE5嘉泰姆

SOT23iE5嘉泰姆

0.16iE5嘉泰姆

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