产品信息查询
产品 新闻
首页 > 产品中心 > 功率器件 > N沟道MOSFETs >Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char
Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char
0

The CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5129 is Pb-free and Halogen-free.
 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage

Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char
产品手册
产品订购

产品订购

产品简介

目录

   产品概述 返回TOPEWb嘉泰姆

The CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5129 is Pb-free and Halogen-free.

   产品特点 返回TOPEWb嘉泰姆

 Trench Technology EWb嘉泰姆

 Supper high density cell design EWb嘉泰姆

 Excellent ON resistance for higher DC current EWb嘉泰姆

 Extremely Low Threshold Voltage EWb嘉泰姆

 Small package SOT-23EWb嘉泰姆

   应用范围 返回TOPEWb嘉泰姆

 Driver for Relay, Solenoid, Motor, LED etc. EWb嘉泰姆

 DC-DC converter circuit  Power Switch EWb嘉泰姆

 Load Switch EWb嘉泰姆

 ChargingEWb嘉泰姆

   技术规格书（产品PDF) 返回TOP EWb嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！EWb嘉泰姆

 QQ截图20160419174301.jpgEWb嘉泰姆

产品封装图 返回TOPEWb嘉泰姆

blob.pngEWb嘉泰姆

电路原理图 返回TOPEWb嘉泰姆

blob.pngEWb嘉泰姆

相关芯片选择指南 返回TOP           更多同类产品......

场效应晶体管 N沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CX380N60T N 1 600 ±30 4.5 0.36 10.6 TO-220 22 x 10
CX380N60TF N 1 600 ±30 4.5 0.36 10.6 TO-220F 29 x 10
CX380N60TG N 1 600 ±30 4.5 0.36 10.6 TO-252E-2 10 x 6.6
CX470N60T N 1 600 ±30 4.5 0.42 9.4 TO-220 22 x 10
CX470N60TF N 1 600 ±30 4.5 0.42 9.4 TO-220F 29 x 10
CX650N60T N 1 600 ±30 4.5 0.55 7.3 TO-220 22 x 10
CX650N60TF N 1 600 ±30 4.5 0.55 7.3 TO-220F 29 x 10
CX650N60TG N 1 600 ±30 4.5 0.55 7.3 TO-252E-2 10 x 6.6
CX650N60TN N 1 600 ±30 4.5 0.55 7.3 TO-251(IPAK) 15.4 x 6.6
CX01N10 N 1 100 ±20 2.5 0.255 1.7 SOT-23 2.9 x 2.4
CX01N11 N 1 110 ±20 2.5 0.25 1.8 SOT-23-6L 2.9 x 2.8
CX07N60 N 1 600 ±30 5 1 7 TO-220 22 x 10
CX07N60F N 1 600 ±30 5 1 7 TO-220F 29 x 10
CX07N65 N 1 650 ±30 5 1.05 7 TO-220 22 x 10
CX07N65F N 1 650 ±30 5 1 7 TO-220F 29 x 10
CX12N65 N 1 650 ±30 5 0.57 12 TO-220 22 x 10
CX12N65F N 1 650 ±30 5 0.57 12 TO-220F 29 x 10
CXMS5110 N 1 20 ±8 1 0.04 3.2 SOT-23 2.9 x 2.4
CXMS5111 N 1 20 ±6 0.85 0.22 0.9 SOT-23 2.9 x 2.4
CXMS5112 N 1 20 ±6 0.85 0.22 0.89 SOT-323 2.1 x 2.3
CXMS5113 N 1 20 ±8 1 0.027 3.9 SOT-23 2.9 x 2.4
CXMS5114 N 1 20 ±6 1 0.21 0.95 SOT-723 1.2 x 1.2
CXMS5115 N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5115B N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5116 N 1 20 ±5 0.85 0.22 0.66 DFN1006-3L 1.0 x 0.6
CXMS5117 N 1 20 ±10 1 0.42 0.54 SOT-723 1.2 x 1.2
CXMS5118 N 1 30 ±20 3 0.043 4 SOT-23 2.9 x 2.4
CXMS5119 N 1 30 ±20 2 0.057 3.1 SOT-23 2.9 x 2.4
CXMS5120 N 1 30 ±20 3 0.039 5.7 SOT-23-6L 2.9 x 2.8
CXMS5121 N 1 30 ±20 1.5 1.3 0.25 SOT-723 1.2 x 1.2
CXMS5122 N 1 30 20 2 0.025 5.7 DFN2020-6L 2.0 x 2.0
CXMS5123 N 1 30 ±20 1.5 1.3 0.25 SOT-323 2.1 x 2.3
CXMS5124 N 1 30 ±20 1.5 1.3 0.25 SOT-523 1.6 x 1.6
CXMS5125 N 1 20 ±6 1 0.41 0.8 SOT-523 1.6 x 1.6
CXMS5126 N 1 20 ±6 1 1.65 0.6 SOT-523 1.6 x 1.6
CXMS5127 N 1 45 ±20 1.5 0.142 1.7 SOT-23 2.9 x 2.4
CXMS5128 N 1 20 ±6 1 0.22 0.88 SOT-523 1.6 x 1.6
CXMS5129 N 1 60 ±20 2 1.7 0.5 SOT-23 2.9 x 2.4
CXMS5130 N 1 60 ±20 2 1.7 0.3 SOT-323 2.1 x 2.3
CXMS5131 N 2 20 ±12 1 0.42 0.56 SOT-363 2.1 x 2.3
CXMS5132 Dual N 2 20 ±6 0.85 0.22 0.89 SOT-363 2.1 x 2.3
CXMS5133 Dual N 2 20 ±6 0.85 0.22 0.88 SOT-563 1.6 x 1.6
CXMS5134 Dual N 2 20 ±10 1 0.0148 7 TSSOP-8L 3 x 6.4
CXMS5135 Dual N 2 20 ±10 1 0.0157 6.3 SOT-23-6L 2.9 x 2.8
CXMS5136 Dual N 2 20 ±10 1 0.016 4.8 PDFN2.9x2.8-8L 2.9 x 2.8
CXMS5137 Dual N 2 60 ±20 2 1.7 0.32 SOT-363 2.1 x 2.3
CXMS5138 Dual N 2 20 ±10 1 0.022 5 SOT-23-6L 2.9 x 2.8
CXMS5139 N 2 20 ±10 1 0.016 6.3 SOT-23-6 2.92 x 2.8
CXMS5140 Dual N 2 20 ±10 1 0.022 5.1 TSSOP-8L 3 x 6.4
CXMS5141 Dual N 2 20 ±12 1 0.018 6 WLCSP-4L 1.47 x 1.47
CXMS5142 Dual N 2 20 ±10 1 0.015 7 TSSOP-8L 3 x 6.4
CXMS5143 Dual N 2 20 ±12 1 0.013 6 WLCSP-4L 1.47 x 1.47
CXMS5144 Dual N 2 12 ±10 1.2 0.0095 6 WLCSP-4L 1.47 x 1.47
CXMS5145 Dual N 2 20 ±10 1 0.055 2.6 SOT-23-6L 2.9 x 2.8
CXMS5146 Dual N 2 20 ±12 1 0.012 6 DFN2020-4L 2.0 x 2.0
CXMS5147 Dual N 2 20 ±10 1 0.0175 6.3 TSOT-23-6L 2.9 x 2.8
CXMS5148 N 2 20 ±10 1 0.0095 11 PDFN3x3-8L 2.9 x 2.8
CXMS5149 Dual N 2 30 ±20 2.2 0.033 6.8 SOP-8L 4.9 x 6.0
CXMS5150 Dual N 2 60 ±20 2 1.7 0.3 SOT-563 1.6 x 1.6

◀ 上一篇:N-Channel, 20V, 0.88A, Small Signal MOSFET CXMS5128 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

返回顶部

下一篇▶: The CXMS5130 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power sw

产品中心
电源管理
LED驱动电路
音频放大IC
电机风扇驱动芯片
MCU存储ADC时钟数据线
技术支持
质量承诺
知识产权
芯片设计
产品方案
关于嘉泰姆
发展历程
公司介绍
联系方式
汇款资料
新闻中心
公司新闻
最新公告
行业新闻
产品促销
杂志
人才招聘
招聘信息
人才理念
客户中心
反馈与建议
文档下载
样品申请

联系我们

微信关注嘉泰姆

嘉泰姆企业微信

员工信箱 网店 诚芯电子
深圳市南山区嘉泰姆电子经营部 版权所有 粤ICP备13004986号
'); })();