The CXMS5121 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

首页 > 产品中心 > 功率器件 > N沟道MOSFETs >The CXMS5121 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

The CXMS5121 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product CXMS5121 is Pb-free and Halogen-free
 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 HBM ESD protection >2 kV

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[ CXMS5121 ]

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The CXMS5121 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product CXMS5121 is Pb-free and Halogen-free

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 Trench Technology Hwk嘉泰姆

 Supper high density cell design Hwk嘉泰姆

 Excellent ON resistance for higher DC current Hwk嘉泰姆

 HBM ESD protection >2 kV Hwk嘉泰姆

 Small package SOT-723Hwk嘉泰姆

应用范围返回TOPHwk嘉泰姆

 Driver: Relay, Solenoid, Lamps,Hammers etc. Hwk嘉泰姆

 Power supply converters circuit Hwk嘉泰姆

 Load/Power Switching for potable deviceHwk嘉泰姆

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需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！Hwk嘉泰姆

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场效应晶体管 N沟道MOS管
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CX380N60T	N	1	600	±30	4.5	0.36	10.6	TO-220	22 x 10
CX380N60TF	N	1	600	±30	4.5	0.36	10.6	TO-220F	29 x 10
CX380N60TG	N	1	600	±30	4.5	0.36	10.6	TO-252E-2	10 x 6.6
CX470N60T	N	1	600	±30	4.5	0.42	9.4	TO-220	22 x 10
CX470N60TF	N	1	600	±30	4.5	0.42	9.4	TO-220F	29 x 10
CX650N60T	N	1	600	±30	4.5	0.55	7.3	TO-220	22 x 10
CX650N60TF	N	1	600	±30	4.5	0.55	7.3	TO-220F	29 x 10
CX650N60TG	N	1	600	±30	4.5	0.55	7.3	TO-252E-2	10 x 6.6
CX650N60TN	N	1	600	±30	4.5	0.55	7.3	TO-251(IPAK)	15.4 x 6.6
CX01N10	N	1	100	±20	2.5	0.255	1.7	SOT-23	2.9 x 2.4
CX01N11	N	1	110	±20	2.5	0.25	1.8	SOT-23-6L	2.9 x 2.8
CX07N60	N	1	600	±30	5	1	7	TO-220	22 x 10
CX07N60F	N	1	600	±30	5	1	7	TO-220F	29 x 10
CX07N65	N	1	650	±30	5	1.05	7	TO-220	22 x 10
CX07N65F	N	1	650	±30	5	1	7	TO-220F	29 x 10
CX12N65	N	1	650	±30	5	0.57	12	TO-220	22 x 10
CX12N65F	N	1	650	±30	5	0.57	12	TO-220F	29 x 10
CXMS5110	N	1	20	±8	1	0.04	3.2	SOT-23	2.9 x 2.4
CXMS5111	N	1	20	±6	0.85	0.22	0.9	SOT-23	2.9 x 2.4
CXMS5112	N	1	20	±6	0.85	0.22	0.89	SOT-323	2.1 x 2.3
CXMS5113	N	1	20	±8	1	0.027	3.9	SOT-23	2.9 x 2.4
CXMS5114	N	1	20	±6	1	0.21	0.95	SOT-723	1.2 x 1.2
CXMS5115	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5115B	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5116	N	1	20	±5	0.85	0.22	0.66	DFN1006-3L	1.0 x 0.6
CXMS5117	N	1	20	±10	1	0.42	0.54	SOT-723	1.2 x 1.2
CXMS5118	N	1	30	±20	3	0.043	4	SOT-23	2.9 x 2.4
CXMS5119	N	1	30	±20	2	0.057	3.1	SOT-23	2.9 x 2.4
CXMS5120	N	1	30	±20	3	0.039	5.7	SOT-23-6L	2.9 x 2.8
CXMS5121	N	1	30	±20	1.5	1.3	0.25	SOT-723	1.2 x 1.2
CXMS5122	N	1	30	20	2	0.025	5.7	DFN2020-6L	2.0 x 2.0
CXMS5123	N	1	30	±20	1.5	1.3	0.25	SOT-323	2.1 x 2.3
CXMS5124	N	1	30	±20	1.5	1.3	0.25	SOT-523	1.6 x 1.6
CXMS5125	N	1	20	±6	1	0.41	0.8	SOT-523	1.6 x 1.6
CXMS5126	N	1	20	±6	1	1.65	0.6	SOT-523	1.6 x 1.6
CXMS5127	N	1	45	±20	1.5	0.142	1.7	SOT-23	2.9 x 2.4
CXMS5128	N	1	20	±6	1	0.22	0.88	SOT-523	1.6 x 1.6
CXMS5129	N	1	60	±20	2	1.7	0.5	SOT-23	2.9 x 2.4
CXMS5130	N	1	60	±20	2	1.7	0.3	SOT-323	2.1 x 2.3
CXMS5131	N	2	20	±12	1	0.42	0.56	SOT-363	2.1 x 2.3
CXMS5132	Dual N	2	20	±6	0.85	0.22	0.89	SOT-363	2.1 x 2.3
CXMS5133	Dual N	2	20	±6	0.85	0.22	0.88	SOT-563	1.6 x 1.6
CXMS5134	Dual N	2	20	±10	1	0.0148	7	TSSOP-8L	3 x 6.4
CXMS5135	Dual N	2	20	±10	1	0.0157	6.3	SOT-23-6L	2.9 x 2.8
CXMS5136	Dual N	2	20	±10	1	0.016	4.8	PDFN2.9x2.8-8L	2.9 x 2.8
CXMS5137	Dual N	2	60	±20	2	1.7	0.32	SOT-363	2.1 x 2.3
CXMS5138	Dual N	2	20	±10	1	0.022	5	SOT-23-6L	2.9 x 2.8
CXMS5139	N	2	20	±10	1	0.016	6.3	SOT-23-6	2.92 x 2.8
CXMS5140	Dual N	2	20	±10	1	0.022	5.1	TSSOP-8L	3 x 6.4
CXMS5141	Dual N	2	20	±12	1	0.018	6	WLCSP-4L	1.47 x 1.47
CXMS5142	Dual N	2	20	±10	1	0.015	7	TSSOP-8L	3 x 6.4
CXMS5143	Dual N	2	20	±12	1	0.013	6	WLCSP-4L	1.47 x 1.47
CXMS5144	Dual N	2	12	±10	1.2	0.0095	6	WLCSP-4L	1.47 x 1.47
CXMS5145	Dual N	2	20	±10	1	0.055	2.6	SOT-23-6L	2.9 x 2.8
CXMS5146	Dual N	2	20	±12	1	0.012	6	DFN2020-4L	2.0 x 2.0
CXMS5147	Dual N	2	20	±10	1	0.0175	6.3	TSOT-23-6L	2.9 x 2.8
CXMS5148	N	2	20	±10	1	0.0095	11	PDFN3x3-8L	2.9 x 2.8
CXMS5149	Dual N	2	30	±20	2.2	0.033	6.8	SOP-8L	4.9 x 6.0
CXMS5150	Dual N	2	60	±20	2	1.7	0.3	SOT-563	1.6 x 1.6

◀ 上一篇:CXMS5120低栅极电荷提供优秀的RDS（ON）N沟道增强MOS场效应晶体管采用沟槽技术和设计用于DC-DC转换和电源开关应用极低阈值电压高直流电流的优良导通电阻

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下一篇▶:N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in

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