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首页 > 产品中心 > 功率器件 > N沟道P沟道双极MOSFETs >N- and P-Channel Complementary 20V MOSFET CXMS5106 the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications,
N- and P-Channel Complementary 20V MOSFET CXMS5106 the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications,
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N- and P-Channel Complementary, 20V, MOSFET CXMS5106 the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications,

N- and P-Channel Complementary 20V MOSFET CXMS5106 the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications,
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Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.) (L×W)
(V) (V) (V) (Ω) (A) (mm)
CXMS5105 N + P 2 20/-20 ±6/±8 0.85/-1.0 0.18/0.085 0.65/-3.1 DFN2020-6L 2.0 x 2.0
CXMS5106 N + P 2 20/-20 ±6 0.9/-0.9 0.23/0.52 0.8/-0.59 SOT-363 2.1 x 2.3
CXMS5107 N + P 2 20/-20 ±6 0.9/-0.9 0.18/0.45 0.79/-0.5 SOT-563 1.6 x 1.6
CXMS5108 N + P 2 20/-20 ±8 1/-1 0.033/0.085 4.4/-2.8 SOT-23-6L 2.9 x 2.8
CXMS5109 N + P 2 12/-12 ±8 1.2/-1.2 0.028/-0.057 5.1/-4.0 DFN2020-6L 2.0 x 2.0