首页 > 产品中心 > 功率器件 > N沟道P沟道双极MOSFETs >The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
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The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
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[ CXPP5450CS ]
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产品概述 返回TOP
The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
产品特点 返回TOP
N-Channel
VDS =30V, ID =6.5A
RDS(ON) < 30mΩ @ VGS=10V
P-Channel
VDS =-30V, ID = -7A
RDS(ON) < 33mΩ @ VGS=-10V
High power and current handing capability
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H-bridge
Inverters
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| MOSFET | ||||||||
| Part | N-Channel | P-Channel | Operating | Package | ||||
| number | VDS (V) | RDS(ON) (mΩ) VGS=10V | VGS(th)(V) | VDS (V) | RDS(ON) (mΩ) VGS=-10V | VGS(th)（V） | Temperature(℃) | |
| CXPP5449CS | 30 | 36 | 1.5 | -30 | 69 | -1.6 | -145 | SOT23-6L |
| CXPP5450CS | 30 | 20 | 1.6 | -30 | 28 | -1.9 | -145 | SOP-8 |
| CXPP5451CS | 40 | 15.4 | 1.7 | -40 | 26 | -1.5 | -145 | SOP-8 |
| CXPP5452CS | 60 | 37 | 2 | -60 | 64 | -26 | -145 | SOP-8 |
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