The CXPP5449CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
N-Channel
VDS =30V, ID =3.5A
RDS(ON) < 58mΩ @ VGS=10V
RDS(ON) < 95mΩ @ VGS=4.5V
P-Channel
VDS =-30V, ID = -2.7A
RDS(ON) < 100mΩ @ VGS=-10V
RDS(ON) < 150mΩ @ VGS=-4.5V
High power and current handing capability
-
[ CXPP5449CS ]"
目录
产品概述 返回TOP
The CXPP5449CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications
产品特点 返回TOP
N-Channel
VDS =30V, ID =3.5A
RDS(ON) < 58mΩ @ VGS=10V
RDS(ON) < 95mΩ @ VGS=4.5V
P-Channel
VDS =-30V, ID = -2.7A
RDS(ON) < 100mΩ @ VGS=-10V
RDS(ON) < 150mΩ @ VGS=-4.5V
High power and current handing capability
应用范围 返回TOP
H-bridge
Inverters
技术规格书(产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品......
MOSFET | ||||||||
Part | N-Channel | P-Channel | Operating | Package | ||||
number | VDS (V) | RDS(ON) (mΩ) VGS=10V | VGS(th)(V) | VDS (V) | RDS(ON) (mΩ) VGS=-10V | VGS(th)(V) | Temperature(℃) | |
CXPP5449CS | 30 | 36 | 1.5 | -30 | 69 | -1.6 | -145 | SOT23-6L |
CXPP5450CS | 30 | 20 | 1.6 | -30 | 28 | -1.9 | -145 | SOP-8 |
CXPP5451CS | 40 | 15.4 | 1.7 | -40 | 26 | -1.5 | -145 | SOP-8 |
CXPP5452CS | 60 | 37 | 2 | -60 | 64 | -26 | -145 | SOP-8 |