CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移

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发表时间：2020-04-24浏览次数：63

CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移

目录hyt嘉泰姆

1.产品概述         2.产品特点
3.应用范围       4.下载产品资料PDF文档
5.产品封装图                     6.电路原理图
7.功能概述       8.相关产品

一,产品概述(General Description) hyt嘉泰姆
The CXSD62117 is a dual channel voltage mode and syn-chronoushyt嘉泰姆
PWM controller which drives dual N-channel MOSFETs. The two channelshyt嘉泰姆
are operated with 180 de-gree phase shift.The device integrates all of thehyt嘉泰姆
control, monitoring, and protecting functions into a single package; provideshyt嘉泰姆
two controlled power output with over-voltage, over-temperature, andhyt嘉泰姆
over-current protections.hyt嘉泰姆
The CXSD62117 provides excellent regulation for output load variation.hyt嘉泰姆
The internal 1.0V temperature-compen- sated reference voltage provideshyt嘉泰姆
high accuracy of 0.8% over line and temperature. The device includes ahyt嘉泰姆
50kHz free-running triangle-wave oscillator that is adjustable from 50kHzhyt嘉泰姆
to 400kHz.The CXSD62117 has been equipped with excellent pro-tectionhyt嘉泰姆
functions: POR, OCP, UVP, and OVP protections.The Power-On-Reset (POR)hyt嘉泰姆
circuit can monitor the VCC and OCSET voltage to make sure the supplyhyt嘉泰姆
voltage ex-ceeds their threshold voltage while the controller is running. Thehyt嘉泰姆
Over-Current Protection (OCP) monitors the output current by using thehyt嘉泰姆
voltage drop across the high side MOSFET’s RDS(ON). When the outputhyt嘉泰姆
current reaches the trip point, the controller will be latched. Under-Voltagehyt嘉泰姆

Protection (UVP) and Over-Voltage Protection (OVP) moni-tor the FBhyt嘉泰姆
voltage to protect CXSD62117 from burnout when output voltage ishyt嘉泰姆
under 50% or over 120% of normal out-put voltage. The CXSD62117hyt嘉泰姆
is available in SOP-20 package.hyt嘉泰姆

二.产品特点(Features)hyt嘉泰姆
Single 12V Power Supply Requiredhyt嘉泰姆
Excellent Output Voltage Regulationhyt嘉泰姆
- 1.0V±0.8% Internal Reference Over Line and Temperaturehyt嘉泰姆
Simple Single Loop Control Designhyt嘉泰姆
- Voltage Mode PWM Control 0~100% Duty Ratiohyt嘉泰姆
Programmable Frequency Range from 50kHz tohyt嘉泰姆
400kHz (Constant 50kHz when Floating)hyt嘉泰姆
Integrated Soft-Start and Soft-Off (Patent Pending)hyt嘉泰姆
Support Pre-Biased Power-Onhyt嘉泰姆
Both Channel with 180o Phase Shifthyt嘉泰姆
Integrated Boot-Strap Diodehyt嘉泰姆
Over-Current Protectionhyt嘉泰姆
- Sense High Side MOSFET’s RDS(ON)hyt嘉泰姆
120% Over-Voltage Protectionhyt嘉泰姆
50% Under-Voltage Protectionhyt嘉泰姆
Over-Temperature Protectionhyt嘉泰姆
Available in SOP-20 Packagehyt嘉泰姆
Lead Free and Green Devices Available (RoHS Compliant)hyt嘉泰姆
三,应用范围 (Applications)hyt嘉泰姆
SMPShyt嘉泰姆

四.下载产品资料PDF文档 hyt嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！hyt嘉泰姆

QQ截图20160419174301.jpg hyt嘉泰姆

hyt嘉泰姆

五,产品封装图 (Package)hyt嘉泰姆

hyt嘉泰姆

六.电路原理图hyt嘉泰姆

hyt嘉泰姆

七,功能概述hyt嘉泰姆

Layout Considerationhyt嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of thehyt嘉泰姆
regulator. With power devices switching at 200kHz, the resulting current transient will cause voltage spike across the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off, the MOSFET is car-rying the full load current. During turn-off, current stops flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnecting imped- ances and the magnitude of voltage spike. And signal and power grounds are to be kept separating till com-bined using the ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold lineshyt嘉泰姆
Layout Consideration (Cont.)hyt嘉泰姆

indicating high current paths; these traces must be short and wide. Components along the bold lines should behyt嘉泰姆

placed lose together. Below is a checklist for your layout:- Keep the switching nodes (UGATE, LGATE, and PHASE)away from sensitive small signal nodes since these nodes are fast moving signals. Therefore, keep traceshyt嘉泰姆
to these nodes as short as possible.hyt嘉泰姆
- The traces from the gate drivers to the MOSFETs (UGATEand LGATE) should be short and wide.hyt嘉泰姆

- Place the source of the high-side MOSFET and the drainof the low-side MOSFET as close as possible. Minimiz-ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.hyt嘉泰姆

- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closehyt嘉泰姆

their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET ashyt嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).hyt嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near thehyt嘉泰姆
loads. The input capacitor GND should be close to the lower MOSFET GND.hyt嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes)should be a large plane for heat sinking.hyt嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.hyt嘉泰姆
- The decoupling capacitor for VCC should be placed near the VCC and GND. CBOOT should be connected ashyt嘉泰姆
close to the BOOT and PHASE pins as possible. hyt嘉泰姆

八,相关产品 更多同类产品...... hyt嘉泰姆

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Part_No hyt嘉泰姆	Package hyt嘉泰姆	Archihyt嘉泰姆 tectuhyt嘉泰姆	Phasehyt嘉泰姆	No.ofhyt嘉泰姆 PWMhyt嘉泰姆 Outputhyt嘉泰姆	Output hyt嘉泰姆 Currenthyt嘉泰姆 (A) hyt嘉泰姆	Inputhyt嘉泰姆 Voltage (V) hyt嘉泰姆		Referencehyt嘉泰姆 Voltagehyt嘉泰姆 (V) hyt嘉泰姆	Bias hyt嘉泰姆 Voltagehyt嘉泰姆 (V) hyt嘉泰姆	Quiescenthyt嘉泰姆 Currenthyt嘉泰姆 (uA) hyt嘉泰姆
Part_No hyt嘉泰姆	Package hyt嘉泰姆	Archihyt嘉泰姆 tectuhyt嘉泰姆	Phasehyt嘉泰姆	No.ofhyt嘉泰姆 PWMhyt嘉泰姆 Outputhyt嘉泰姆	Output hyt嘉泰姆 Currenthyt嘉泰姆 (A) hyt嘉泰姆	minhyt嘉泰姆	maxhyt嘉泰姆	Referencehyt嘉泰姆 Voltagehyt嘉泰姆 (V) hyt嘉泰姆	Bias hyt嘉泰姆 Voltagehyt嘉泰姆 (V) hyt嘉泰姆	Quiescenthyt嘉泰姆 Currenthyt嘉泰姆 (uA) hyt嘉泰姆
CXSD6273hyt嘉泰姆	SOP-14hyt嘉泰姆 QSOP-16hyt嘉泰姆 QFN4x4-16hyt嘉泰姆	VM hyt嘉泰姆	1 hyt嘉泰姆	1 hyt嘉泰姆	30hyt嘉泰姆	2.9 hyt嘉泰姆	13.2hyt嘉泰姆	0.9hyt嘉泰姆	12 hyt嘉泰姆	8000hyt嘉泰姆
CXSD6274hyt嘉泰姆	SOP-8hyt嘉泰姆	VM hyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	20hyt嘉泰姆	2.9 hyt嘉泰姆	13.2 hyt嘉泰姆	0.8hyt嘉泰姆	12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6274Chyt嘉泰姆	SOP-8hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	20hyt嘉泰姆	2.9hyt嘉泰姆	13.2hyt嘉泰姆	0.8hyt嘉泰姆	12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6275hyt嘉泰姆	QFN4x4-24hyt嘉泰姆	VMhyt嘉泰姆	2hyt嘉泰姆	1hyt嘉泰姆	60hyt嘉泰姆	3.1hyt嘉泰姆	13.2hyt嘉泰姆	0.6hyt嘉泰姆	12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6276hyt嘉泰姆	SOP-8hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	20hyt嘉泰姆	2.2hyt嘉泰姆	13.2hyt嘉泰姆	0.8hyt嘉泰姆	5~12hyt嘉泰姆	2100hyt嘉泰姆
CXSD6276Ahyt嘉泰姆	SOP-8hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	20hyt嘉泰姆	2.2hyt嘉泰姆	13.2hyt嘉泰姆	0.8hyt嘉泰姆	5~12hyt嘉泰姆	2100hyt嘉泰姆
CXSD6277/A/Bhyt嘉泰姆	SOP8\|TSSOP8hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	5hyt嘉泰姆	5hyt嘉泰姆	13.2hyt嘉泰姆	1.25\|0.8hyt嘉泰姆	5~12hyt嘉泰姆	3000hyt嘉泰姆
CXSD6278hyt嘉泰姆	SOP-8hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	10hyt嘉泰姆	3.3hyt嘉泰姆	5.5hyt嘉泰姆	0.8hyt嘉泰姆	5hyt嘉泰姆	2100hyt嘉泰姆
CXSD6279Bhyt嘉泰姆	SOP-14hyt嘉泰姆	VM hyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	10hyt嘉泰姆	5hyt嘉泰姆	13.2hyt嘉泰姆	0.8hyt嘉泰姆	12hyt嘉泰姆	2000hyt嘉泰姆
CXSD6280hyt嘉泰姆	TSSOP-24hyt嘉泰姆 \|QFN5x5-32hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	2hyt嘉泰姆	20hyt嘉泰姆	5hyt嘉泰姆	13.2hyt嘉泰姆	0.6hyt嘉泰姆	5~12hyt嘉泰姆	4000hyt嘉泰姆
CXSD6281Nhyt嘉泰姆	SOP14hyt嘉泰姆 QSOP16hyt嘉泰姆 QFN-16hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	30hyt嘉泰姆	2.9hyt嘉泰姆	13.2hyt嘉泰姆	0.9hyt嘉泰姆	12hyt嘉泰姆	4000hyt嘉泰姆
CXSD6282hyt嘉泰姆	SOP-14hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	30hyt嘉泰姆	2.2hyt嘉泰姆	13.2hyt嘉泰姆	0.6hyt嘉泰姆	12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6282Ahyt嘉泰姆	SOP-14hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	30hyt嘉泰姆	2.2hyt嘉泰姆	13.2hyt嘉泰姆	0.6hyt嘉泰姆	12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6283hyt嘉泰姆	SOP-14hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	25hyt嘉泰姆	2.2hyt嘉泰姆	13.2hyt嘉泰姆	0.8hyt嘉泰姆	12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6284/Ahyt嘉泰姆	LQFP7x7 48hyt嘉泰姆 TQFN7x7-48hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	6hyt嘉泰姆	0.015hyt嘉泰姆	1.4hyt嘉泰姆	6.5hyt嘉泰姆	-hyt嘉泰姆	5hyt嘉泰姆	1800hyt嘉泰姆
CXSD6285hyt嘉泰姆	TSSOP-24Phyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	2hyt嘉泰姆	20hyt嘉泰姆	2.97hyt嘉泰姆	5.5hyt嘉泰姆	0.8hyt嘉泰姆	5~12hyt嘉泰姆	5000hyt嘉泰姆
CXSD6286hyt嘉泰姆	SOP-14hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	10hyt嘉泰姆	5hyt嘉泰姆	13.2hyt嘉泰姆	0.8hyt嘉泰姆	12hyt嘉泰姆	3000hyt嘉泰姆
CXSD6287hyt嘉泰姆	SOP-8-P\|DIP-8hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	1hyt嘉泰姆	30hyt嘉泰姆	2.9hyt嘉泰姆	13.2hyt嘉泰姆	1.2hyt嘉泰姆	12hyt嘉泰姆	3000hyt嘉泰姆
CXSD6288hyt嘉泰姆	SSOP28hyt嘉泰姆 QFN4x4-24hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	2hyt嘉泰姆	20hyt嘉泰姆	5hyt嘉泰姆	24hyt嘉泰姆	0.9hyt嘉泰姆	5hyt嘉泰姆	1200hyt嘉泰姆
CXSD6289hyt嘉泰姆	SOP-20hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	2hyt嘉泰姆	20hyt嘉泰姆	2.2hyt嘉泰姆	13.2hyt嘉泰姆	0.6hyt嘉泰姆	5~12hyt嘉泰姆	4000hyt嘉泰姆
CXSD6290hyt嘉泰姆	SOP8\|DFN3x3-10hyt嘉泰姆	VMhyt嘉泰姆	1hyt嘉泰姆	2hyt嘉泰姆	-hyt嘉泰姆	-hyt嘉泰姆

上一篇：CXSD62116A|B|C电压模式固定300kHz开关频率和同步降压控制器两个电源电压模式

下一篇：CXSD62118单相恒定时间同步的PWM控制器驱动N通道mosfet低压芯片组RAM电源

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