CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移

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发表时间：2020-04-24浏览次数：172

CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移

目录gRC嘉泰姆

1.产品概述         2.产品特点
3.应用范围       4.下载产品资料PDF文档
5.产品封装图                     6.电路原理图
7.功能概述       8.相关产品

一,产品概述(General Description) gRC嘉泰姆
The CXSD62117 is a dual channel voltage mode and syn-chronousgRC嘉泰姆
PWM controller which drives dual N-channel MOSFETs. The two channelsgRC嘉泰姆
are operated with 180 de-gree phase shift.The device integrates all of thegRC嘉泰姆
control, monitoring, and protecting functions into a single package; providesgRC嘉泰姆
two controlled power output with over-voltage, over-temperature, andgRC嘉泰姆
over-current protections.gRC嘉泰姆
The CXSD62117 provides excellent regulation for output load variation.gRC嘉泰姆
The internal 1.0V temperature-compen- sated reference voltage providesgRC嘉泰姆
high accuracy of 0.8% over line and temperature. The device includes agRC嘉泰姆
50kHz free-running triangle-wave oscillator that is adjustable from 50kHzgRC嘉泰姆
to 400kHz.The CXSD62117 has been equipped with excellent pro-tectiongRC嘉泰姆
functions: POR, OCP, UVP, and OVP protections.The Power-On-Reset (POR)gRC嘉泰姆
circuit can monitor the VCC and OCSET voltage to make sure the supplygRC嘉泰姆
voltage ex-ceeds their threshold voltage while the controller is running. ThegRC嘉泰姆
Over-Current Protection (OCP) monitors the output current by using thegRC嘉泰姆
voltage drop across the high side MOSFET’s RDS(ON). When the outputgRC嘉泰姆
current reaches the trip point, the controller will be latched. Under-VoltagegRC嘉泰姆

Protection (UVP) and Over-Voltage Protection (OVP) moni-tor the FBgRC嘉泰姆
voltage to protect CXSD62117 from burnout when output voltage isgRC嘉泰姆
under 50% or over 120% of normal out-put voltage. The CXSD62117gRC嘉泰姆
is available in SOP-20 package.gRC嘉泰姆

二.产品特点(Features)gRC嘉泰姆
Single 12V Power Supply RequiredgRC嘉泰姆
Excellent Output Voltage RegulationgRC嘉泰姆
- 1.0V±0.8% Internal Reference Over Line and TemperaturegRC嘉泰姆
Simple Single Loop Control DesigngRC嘉泰姆
- Voltage Mode PWM Control 0~100% Duty RatiogRC嘉泰姆
Programmable Frequency Range from 50kHz togRC嘉泰姆
400kHz (Constant 50kHz when Floating)gRC嘉泰姆
Integrated Soft-Start and Soft-Off (Patent Pending)gRC嘉泰姆
Support Pre-Biased Power-OngRC嘉泰姆
Both Channel with 180o Phase ShiftgRC嘉泰姆
Integrated Boot-Strap DiodegRC嘉泰姆
Over-Current ProtectiongRC嘉泰姆
- Sense High Side MOSFET’s RDS(ON)gRC嘉泰姆
120% Over-Voltage ProtectiongRC嘉泰姆
50% Under-Voltage ProtectiongRC嘉泰姆
Over-Temperature ProtectiongRC嘉泰姆
Available in SOP-20 PackagegRC嘉泰姆
Lead Free and Green Devices Available (RoHS Compliant)gRC嘉泰姆
三,应用范围 (Applications)gRC嘉泰姆
SMPSgRC嘉泰姆

四.下载产品资料PDF文档 gRC嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！gRC嘉泰姆

QQ截图20160419174301.jpg gRC嘉泰姆

gRC嘉泰姆

五,产品封装图 (Package)gRC嘉泰姆

gRC嘉泰姆

六.电路原理图gRC嘉泰姆

gRC嘉泰姆

七,功能概述gRC嘉泰姆

Layout ConsiderationgRC嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of thegRC嘉泰姆
regulator. With power devices switching at 200kHz, the resulting current transient will cause voltage spike across the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off, the MOSFET is car-rying the full load current. During turn-off, current stops flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnecting imped- ances and the magnitude of voltage spike. And signal and power grounds are to be kept separating till com-bined using the ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold linesgRC嘉泰姆
Layout Consideration (Cont.)gRC嘉泰姆

indicating high current paths; these traces must be short and wide. Components along the bold lines should begRC嘉泰姆

placed lose together. Below is a checklist for your layout:- Keep the switching nodes (UGATE, LGATE, and PHASE)away from sensitive small signal nodes since these nodes are fast moving signals. Therefore, keep tracesgRC嘉泰姆
to these nodes as short as possible.gRC嘉泰姆
- The traces from the gate drivers to the MOSFETs (UGATEand LGATE) should be short and wide.gRC嘉泰姆

- Place the source of the high-side MOSFET and the drainof the low-side MOSFET as close as possible. Minimiz-ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.gRC嘉泰姆

- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closegRC嘉泰姆

their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET asgRC嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).gRC嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near thegRC嘉泰姆
loads. The input capacitor GND should be close to the lower MOSFET GND.gRC嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes)should be a large plane for heat sinking.gRC嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.gRC嘉泰姆
- The decoupling capacitor for VCC should be placed near the VCC and GND. CBOOT should be connected asgRC嘉泰姆
close to the BOOT and PHASE pins as possible. gRC嘉泰姆

八,相关产品 更多同类产品...... gRC嘉泰姆

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Part_No gRC嘉泰姆	Package gRC嘉泰姆	ArchigRC嘉泰姆 tectugRC嘉泰姆	PhasegRC嘉泰姆	No.ofgRC嘉泰姆 PWMgRC嘉泰姆 OutputgRC嘉泰姆	Output gRC嘉泰姆 CurrentgRC嘉泰姆 (A) gRC嘉泰姆	InputgRC嘉泰姆 Voltage (V) gRC嘉泰姆		ReferencegRC嘉泰姆 VoltagegRC嘉泰姆 (V) gRC嘉泰姆	Bias gRC嘉泰姆 VoltagegRC嘉泰姆 (V) gRC嘉泰姆	QuiescentgRC嘉泰姆 CurrentgRC嘉泰姆 (uA) gRC嘉泰姆
Part_No gRC嘉泰姆	Package gRC嘉泰姆	ArchigRC嘉泰姆 tectugRC嘉泰姆	PhasegRC嘉泰姆	No.ofgRC嘉泰姆 PWMgRC嘉泰姆 OutputgRC嘉泰姆	Output gRC嘉泰姆 CurrentgRC嘉泰姆 (A) gRC嘉泰姆	mingRC嘉泰姆	maxgRC嘉泰姆	ReferencegRC嘉泰姆 VoltagegRC嘉泰姆 (V) gRC嘉泰姆	Bias gRC嘉泰姆 VoltagegRC嘉泰姆 (V) gRC嘉泰姆	QuiescentgRC嘉泰姆 CurrentgRC嘉泰姆 (uA) gRC嘉泰姆
CXSD6273gRC嘉泰姆	SOP-14gRC嘉泰姆 QSOP-16gRC嘉泰姆 QFN4x4-16gRC嘉泰姆	VM gRC嘉泰姆	1 gRC嘉泰姆	1 gRC嘉泰姆	30gRC嘉泰姆	2.9 gRC嘉泰姆	13.2gRC嘉泰姆	0.9gRC嘉泰姆	12 gRC嘉泰姆	8000gRC嘉泰姆
CXSD6274gRC嘉泰姆	SOP-8gRC嘉泰姆	VM gRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	20gRC嘉泰姆	2.9 gRC嘉泰姆	13.2 gRC嘉泰姆	0.8gRC嘉泰姆	12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6274CgRC嘉泰姆	SOP-8gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	20gRC嘉泰姆	2.9gRC嘉泰姆	13.2gRC嘉泰姆	0.8gRC嘉泰姆	12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6275gRC嘉泰姆	QFN4x4-24gRC嘉泰姆	VMgRC嘉泰姆	2gRC嘉泰姆	1gRC嘉泰姆	60gRC嘉泰姆	3.1gRC嘉泰姆	13.2gRC嘉泰姆	0.6gRC嘉泰姆	12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6276gRC嘉泰姆	SOP-8gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	20gRC嘉泰姆	2.2gRC嘉泰姆	13.2gRC嘉泰姆	0.8gRC嘉泰姆	5~12gRC嘉泰姆	2100gRC嘉泰姆
CXSD6276AgRC嘉泰姆	SOP-8gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	20gRC嘉泰姆	2.2gRC嘉泰姆	13.2gRC嘉泰姆	0.8gRC嘉泰姆	5~12gRC嘉泰姆	2100gRC嘉泰姆
CXSD6277/A/BgRC嘉泰姆	SOP8\|TSSOP8gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	5gRC嘉泰姆	5gRC嘉泰姆	13.2gRC嘉泰姆	1.25\|0.8gRC嘉泰姆	5~12gRC嘉泰姆	3000gRC嘉泰姆
CXSD6278gRC嘉泰姆	SOP-8gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	10gRC嘉泰姆	3.3gRC嘉泰姆	5.5gRC嘉泰姆	0.8gRC嘉泰姆	5gRC嘉泰姆	2100gRC嘉泰姆
CXSD6279BgRC嘉泰姆	SOP-14gRC嘉泰姆	VM gRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	10gRC嘉泰姆	5gRC嘉泰姆	13.2gRC嘉泰姆	0.8gRC嘉泰姆	12gRC嘉泰姆	2000gRC嘉泰姆
CXSD6280gRC嘉泰姆	TSSOP-24gRC嘉泰姆 \|QFN5x5-32gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	2gRC嘉泰姆	20gRC嘉泰姆	5gRC嘉泰姆	13.2gRC嘉泰姆	0.6gRC嘉泰姆	5~12gRC嘉泰姆	4000gRC嘉泰姆
CXSD6281NgRC嘉泰姆	SOP14gRC嘉泰姆 QSOP16gRC嘉泰姆 QFN-16gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	30gRC嘉泰姆	2.9gRC嘉泰姆	13.2gRC嘉泰姆	0.9gRC嘉泰姆	12gRC嘉泰姆	4000gRC嘉泰姆
CXSD6282gRC嘉泰姆	SOP-14gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	30gRC嘉泰姆	2.2gRC嘉泰姆	13.2gRC嘉泰姆	0.6gRC嘉泰姆	12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6282AgRC嘉泰姆	SOP-14gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	30gRC嘉泰姆	2.2gRC嘉泰姆	13.2gRC嘉泰姆	0.6gRC嘉泰姆	12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6283gRC嘉泰姆	SOP-14gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	25gRC嘉泰姆	2.2gRC嘉泰姆	13.2gRC嘉泰姆	0.8gRC嘉泰姆	12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6284/AgRC嘉泰姆	LQFP7x7 48gRC嘉泰姆 TQFN7x7-48gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	6gRC嘉泰姆	0.015gRC嘉泰姆	1.4gRC嘉泰姆	6.5gRC嘉泰姆	-gRC嘉泰姆	5gRC嘉泰姆	1800gRC嘉泰姆
CXSD6285gRC嘉泰姆	TSSOP-24PgRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	2gRC嘉泰姆	20gRC嘉泰姆	2.97gRC嘉泰姆	5.5gRC嘉泰姆	0.8gRC嘉泰姆	5~12gRC嘉泰姆	5000gRC嘉泰姆
CXSD6286gRC嘉泰姆	SOP-14gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	10gRC嘉泰姆	5gRC嘉泰姆	13.2gRC嘉泰姆	0.8gRC嘉泰姆	12gRC嘉泰姆	3000gRC嘉泰姆
CXSD6287gRC嘉泰姆	SOP-8-P\|DIP-8gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	1gRC嘉泰姆	30gRC嘉泰姆	2.9gRC嘉泰姆	13.2gRC嘉泰姆	1.2gRC嘉泰姆	12gRC嘉泰姆	3000gRC嘉泰姆
CXSD6288gRC嘉泰姆	SSOP28gRC嘉泰姆 QFN4x4-24gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	2gRC嘉泰姆	20gRC嘉泰姆	5gRC嘉泰姆	24gRC嘉泰姆	0.9gRC嘉泰姆	5gRC嘉泰姆	1200gRC嘉泰姆
CXSD6289gRC嘉泰姆	SOP-20gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	2gRC嘉泰姆	20gRC嘉泰姆	2.2gRC嘉泰姆	13.2gRC嘉泰姆	0.6gRC嘉泰姆	5~12gRC嘉泰姆	4000gRC嘉泰姆
CXSD6290gRC嘉泰姆	SOP8\|DFN3x3-10gRC嘉泰姆	VMgRC嘉泰姆	1gRC嘉泰姆	2gRC嘉泰姆	-gRC嘉泰姆	-gRC嘉泰姆

上一篇：CXSD62116A|B|C电压模式固定300kHz开关频率和同步降压控制器两个电源电压模式

下一篇：CXSD62118单相恒定时间同步的PWM控制器驱动N通道mosfet低压芯片组RAM电源

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