CXSD62117双通道电压模式和同步PWM控制器驱动双N通道mosfet两个通道均采用180度相移 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Layout Consideration indicating high current paths; these traces must be short and wide. Components along the bold lines should be placed lose together. Below is a checklist for your layout:- Keep the switching nodes (UGATE, LGATE, and PHASE)away from sensitive small signal nodes since these nodes are fast moving signals. Therefore, keep traces - Place the source of the high-side MOSFET and the drainof the low-side MOSFET as close as possible. Minimiz-ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node. - Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be close their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET as 八,相关产品 更多同类产品......
|