目录GEL嘉泰姆

1.产品概述                       2.产品特点GEL嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 GEL嘉泰姆
5.产品封装图                     6.电路原理图                   GEL嘉泰姆
7.功能概述                        8.相关产品GEL嘉泰姆

一,产品概述(General Description)         GEL嘉泰姆
        The CXSD62116A/B/C is a voltage mode, fixed 300kHz-switching frequency,GEL嘉泰姆
and synchronous buck controller. The CXSD62116A/B/C allows wide input voltageGEL嘉泰姆
that is either a single 5~12V or two supply voltage(s) for various applications.GEL嘉泰姆
A power-on-reset (POR) circuit monitors the VCC supply voltage to preventGEL嘉泰姆
wrong logic controls. A built-in digital soft-start circuit prevents the outputGEL嘉泰姆
voltages from overshoot as well as limits the input current. An internalGEL嘉泰姆
0.6V temperature-compensated reference voltage with high accuracy isGEL嘉泰姆
designed to meet the requirement of low output voltage applications.GEL嘉泰姆
The CXSD62116A/B/C provides excellent output voltage regulations againstGEL嘉泰姆
load current variation.GEL嘉泰姆
     The controller’s over-current protection monitors the output currentGEL嘉泰姆
by using the voltage drops across the RDS(ON)of low-side MOSFET,GEL嘉泰姆
eliminating the need for a current sensing resistor that features highGEL嘉泰姆
efficiency and low cost.GEL嘉泰姆
     The CXSD62116A/B/C also integrates over-voltage protection (OVP) andGEL嘉泰姆
under-voltage protection circuit which moni-tors the FB voltage to preventGEL嘉泰姆
the PWM output from over and under voltage.GEL嘉泰姆
     The CXSD62116A/B/C is available in a simple SOP-8P package.GEL嘉泰姆
二.产品特点(Features)GEL嘉泰姆
Wide Operation Supply Voltage from 5V to 12VGEL嘉泰姆
Power-On-Reset Monitoring on VCC GEL嘉泰姆
Excellent Reference Voltage RegulationsGEL嘉泰姆
- 0.6V Internal ReferenceGEL嘉泰姆
- ±1% Over Temperature RangeGEL嘉泰姆
Integrated Soft-StartGEL嘉泰姆
Automatic PSM/PWM ModesGEL嘉泰姆
Voltage Mode PWM Operation with 90% (Max.) Duty CycleGEL嘉泰姆
Under-Voltage ProtectionGEL嘉泰姆
Adjustable Over-Current Protection ThresholdGEL嘉泰姆
- Sensing the RDS(ON) of Low-Side MOSFETGEL嘉泰姆
Over-Voltage ProtectionGEL嘉泰姆
Under-Voltage ProtectionGEL嘉泰姆
Simple SOP-8P PackageGEL嘉泰姆
Lead Free and Green Devices AvailableGEL嘉泰姆
(RoHS Compliant)GEL嘉泰姆
三,应用范围 (Applications)GEL嘉泰姆
Graphic CardsGEL嘉泰姆
DSL, Switch HUBGEL嘉泰姆
Wireless LanGEL嘉泰姆
Notebook ComputerGEL嘉泰姆
Mother BoardGEL嘉泰姆
LCD Monitor/TVGEL嘉泰姆

四.下载产品资料PDF文档 GEL嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！GEL嘉泰姆

 GEL嘉泰姆

五,产品封装图 (Package)GEL嘉泰姆
GEL嘉泰姆
六.电路原理图GEL嘉泰姆

GEL嘉泰姆
七,功能概述GEL嘉泰姆
Layout ConsiderationGEL嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of theGEL嘉泰姆
regulator. With power devices switching at 300kHz,the resulting current transient will cause voltage spike acrossGEL嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionGEL嘉泰姆
of the PWM MOSFET. Before turn-off, the MOSFET is car rying the full load current. During turn-off, current stopsGEL嘉泰姆
flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance ofGEL嘉泰姆
the circuit generates a large voltage spike during the switching interval. In general, using short and wide printedGEL嘉泰姆
circuit traces should minimize interconnecting imped-GEL嘉泰姆

Layout Consideration (Cont.)GEL嘉泰姆
ances and the magnitude of voltage spike. And signal and power grounds are to be kept separate till combinedGEL嘉泰姆

using ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold linesGEL嘉泰姆
indicating high current paths; these traces must be short and wide. Components along the bold lines should beGEL嘉泰姆

placed lose together. Below is a checklist for your layout:GEL嘉泰姆

- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since theseGEL嘉泰姆

nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.GEL嘉泰姆

- The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide.GEL嘉泰姆

- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-GEL嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.GEL嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closeGEL嘉泰姆
their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET asGEL嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).GEL嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near theGEL嘉泰姆
loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.GEL嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking.GEL嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.Close to ICGEL嘉泰姆
Figure 8. Layout GuidelinesGEL嘉泰姆

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