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首页 > 产品中心 > 电源管理 > DC降压型芯片 > Buck降压型芯片 >单相定时同步的PWM控制器CXSD62102驱动N通道mosfet瞬态响应和准确的直流电压以PFM或PWM模式输出
单相定时同步的PWM控制器CXSD62102驱动N通道mosfet瞬态响应和准确的直流电压以PFM或PWM模式输出
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CXSD62102提供出色的瞬态响应和准确的直流电压以PFM或PWM模式输出。在脉冲频率模式(PFM)中,CXSD62102在轻到重负载的负载下提供非常高的效率-调制开关频率。在脉宽调制模式下,转换器几乎在用于低噪声要求的恒定频率

单相定时同步的PWM控制器CXSD62102驱动N通道mosfet瞬态响应和准确的直流电压以PFM或PWM模式输出
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目录hXu嘉泰姆

1.产品概述                       2.产品特点hXu嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 hXu嘉泰姆
5.产品封装图                     6.电路原理图                   hXu嘉泰姆
7.功能概述                        8.相关产品hXu嘉泰姆

一,产品概述(General Description)         hXu嘉泰姆
            The CXSD62102 is a single-phase, constant on-time, synchronous PWMhXu嘉泰姆
controller, which drives N-channel MOSFETs. The CXSD62102 steps down highhXu嘉泰姆
voltage to generate low-voltage chipset or RAM supplies in notebook computers.hXu嘉泰姆
The CXSD62102 provides excellent transient response and accurate DC voltagehXu嘉泰姆
output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), theCXSD62102 provides very high efficiency over light to heavy loads with loading-hXu嘉泰姆
modulated switching frequencies. In PWM Mode, the converter works nearly athXu嘉泰姆
constant frequency for low-noise requirements. CXSD62102 is built in remotehXu嘉泰姆
sense function for applications that require remote sense.The CXSD62102 ishXu嘉泰姆
equipped with accurate positive current limit, output under-voltage, and outputhXu嘉泰姆
over-voltage protections, perfect for NB applications. The Power-On-ResethXu嘉泰姆
function monitors the voltage on VCC to prevent wrong operation duringhXu嘉泰姆
power-on. The CXSD62102 has a 1ms digital soft start and built-in an integratedhXu嘉泰姆
output discharge device for soft stop. An internal integrated soft-start ramps uphXu嘉泰姆
the output voltage with programmable slew rate to reduce the start-up current.hXu嘉泰姆
A soft-stop function actively discharges the output capacitors.hXu嘉泰姆
       The CXSD62102 is available in 16pin TQFN3x3-16 package respectively.hXu嘉泰姆
二.产品特点(Features)hXu嘉泰姆
1.)Adjustable Output Voltage from +0.6V to +3.3VhXu嘉泰姆
      - 0.6V Reference VoltagehXu嘉泰姆
      - ±0.6% Accuracy Over-TemperaturehXu嘉泰姆
2.)Operates from An Input Battery Voltage Range of +1.8V to +28VhXu嘉泰姆
3.)Remote Feedback Sense for Excellent Output VoltagehXu嘉泰姆
4.)REFIN Function for Over-clocking Purpose from 0.5V~2.5V rangehXu嘉泰姆
5.)Power-On-Reset Monitoring on VCC pinhXu嘉泰姆
6.)Excellent line and load transient responseshXu嘉泰姆
7.)PFM mode for increased light load efficiencyhXu嘉泰姆
8.)Programmable PWM Frequency from 100kHz to 500kHzhXu嘉泰姆
9.)Selectable Forced PWM or automatic PFM/PWM modehXu嘉泰姆
10.)Built in 30A Output current driving capabilityIntegrate MOSFET DrivershXu嘉泰姆
11.)Integrated Bootstrap Forward P-CH MOSFEThXu嘉泰姆
12.)Adjustable Integrated Soft-Start and Soft-Stop Power Good MonitoringhXu嘉泰姆
13.)70% Under-Voltage ProtectionhXu嘉泰姆
14.)125% Over-Voltage Protection TQFN3x3-16 PackagehXu嘉泰姆
15.)Lead Free and Green Devices AvailablehXu嘉泰姆
三,应用范围 (Applications)hXu嘉泰姆
NotebookhXu嘉泰姆
Table PChXu嘉泰姆
Hand-Held PortablehXu嘉泰姆
AIO PChXu嘉泰姆
四.下载产品资料PDF文档 hXu嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持hXu嘉泰姆

 QQ截图20160419174301.jpghXu嘉泰姆

五,产品封装图 (Package)hXu嘉泰姆

blob.pnghXu嘉泰姆

六.电路原理图hXu嘉泰姆


blob.pnghXu嘉泰姆
blob.pnghXu嘉泰姆

七,功能概述hXu嘉泰姆


Input Capacitor Selection (Cont.)hXu嘉泰姆
higher than the maximum input voltage. The maximum RMS current rating requirement is approximately IOUT/2,where IOUT is the load current. During power-up, the input capacitors have to handle great amount of surge current.For low-duty notebook appliactions, ceramic capacitor is recommended. The capacitors must be connected be-tween the drain of high-side MOSFET and the source of low-side MOSFET with very low-impeadance PCB layout. hXu嘉泰姆
MOSFET SelectionhXu嘉泰姆
The application for a notebook battery with a maximum voltage of 24V, at least a minimum 30V MOSFETs shouldhXu嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:For the low-side MOSFET, before it is turned on, the body diode has been conducting. The low-side MOSFET driver will not charge the miller capacitor of this MOSFET.hXu嘉泰姆
In the turning off process of the low-side MOSFET, the load current will shift to the body diode first. The high dv/dt of the phase node voltage will charge the miller capaci-tor through the low-side MOSFET driver sinking current path. This results in much less switchinghXu嘉泰姆
loss of the low-side MOSFETs. The duty cycle is often very small in high battery voltage applications, and the low-side MOSFET will conduct most of the switching cycle; therefore, when using smaller RDS(ON) of the low-side MOSFET, the con-verter can reduce power loss. The gate charge for this MOSFET is usually the secondary consideration. The high-side MOSFET does not have this zero voltage switch-ing condition; in addition, it conducts for less time com-pared to the low-side MOSFET, so the switching loss tends to be dominant. Priority should be given to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.hXu嘉泰姆
The selection of the N-channel power MOSFETs are determined by the R DS(ON), reversing transfer capaci-tance (CRSS) and maximum output current requirement.The losses in the MOSFETs have two components:hXu嘉泰姆
conduction loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximatelyhXu嘉泰姆
given by the following equations:hXu嘉泰姆
Phigh-side = IOUT (1+ TC)(RDS(ON))D + (0.5)( IOUT)(VIN)( tSW)FSWhXu嘉泰姆
Plow-side = IOUT (1+ TC)(RDS(ON))(1-D) is the load current TC is the temperature dependency of RDS(ON)hXu嘉泰姆
FSW is the switching frequency tSW is the switching interval D is the duty cycleNote that both MOSFETs have conduction losses while the high-side MOSFET includes an additional transition loss.The switching interval, tSW, is the function of the reverse transfer capacitance CRSS. The (1+TC) term is a factor in the temperature dependency of the RDS(ON) and can be extracted from the “RDS(ON) vs. Temperature” curve of the power MOSFET.hXu嘉泰姆
Layout ConsiderationhXu嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.hXu嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrosshXu嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionhXu嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,hXu嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the low side MOSFET and parasitic diode. Any parasitichXu嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andhXu嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike.hXu嘉泰姆
Besides, signal and power grounds are to be kept sepa-rating and finally combined using ground plane construc-hXu嘉泰姆
tion or single point grounding. The best tie-point between the signal ground and the power ground is at the nega-hXu嘉泰姆
tive side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are nothXu嘉泰姆

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CXSD6299|AhXu嘉泰姆

SOP-8PhXu嘉泰姆

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13.2hXu嘉泰姆

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16000hXu嘉泰姆

CXSD62100hXu嘉泰姆

TQFN3x3-10hXu嘉泰姆

VMhXu嘉泰姆

1hXu嘉泰姆

1hXu嘉泰姆

25hXu嘉泰姆

4.5hXu嘉泰姆

13.2hXu嘉泰姆

0.6hXu嘉泰姆

5~12hXu嘉泰姆

2500hXu嘉泰姆

CXSD62101|LhXu嘉泰姆

TDFN3x3-10hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

1hXu嘉泰姆

30hXu嘉泰姆

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25hXu嘉泰姆

0.8hXu嘉泰姆

5~12hXu嘉泰姆

2000hXu嘉泰姆

CXSD62102hXu嘉泰姆

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1hXu嘉泰姆

1hXu嘉泰姆

30hXu嘉泰姆

1.8hXu嘉泰姆

28hXu嘉泰姆

0.6hXu嘉泰姆

5hXu嘉泰姆

600hXu嘉泰姆

CXSD62102AhXu嘉泰姆

TQFN 3x3 16hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

1hXu嘉泰姆

30hXu嘉泰姆

1.8hXu嘉泰姆

28hXu嘉泰姆

0.6hXu嘉泰姆

5hXu嘉泰姆

600hXu嘉泰姆

CXSD62103hXu嘉泰姆

QFN4x4-24hXu嘉泰姆

VMhXu嘉泰姆

2hXu嘉泰姆

1hXu嘉泰姆

50hXu嘉泰姆

4.5hXu嘉泰姆

13.2hXu嘉泰姆

0.6hXu嘉泰姆

5~12hXu嘉泰姆

5000hXu嘉泰姆

CXSD62104hXu嘉泰姆

TQFN4x4-24hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

2hXu嘉泰姆

15hXu嘉泰姆

6hXu嘉泰姆

25hXu嘉泰姆

2hXu嘉泰姆

NhXu嘉泰姆

550hXu嘉泰姆

CXSD62105hXu嘉泰姆

TQFN4x4-24hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

2hXu嘉泰姆

15hXu嘉泰姆

6hXu嘉泰姆

25hXu嘉泰姆

2hXu嘉泰姆

NhXu嘉泰姆

550hXu嘉泰姆

CXSD62106|AhXu嘉泰姆

TQFN4x4-4hXu嘉泰姆

TQFN3x3-20hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

2hXu嘉泰姆

20hXu嘉泰姆

3hXu嘉泰姆

28hXu嘉泰姆

0.75hXu嘉泰姆

5hXu嘉泰姆

800hXu嘉泰姆

CXSD62107hXu嘉泰姆

TQFN3x3-16hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

1hXu嘉泰姆

20hXu嘉泰姆

1.8hXu嘉泰姆

28hXu嘉泰姆

0.75hXu嘉泰姆

5hXu嘉泰姆

400hXu嘉泰姆

CXSD62108hXu嘉泰姆

QFN3.5x3.5-14hXu嘉泰姆

TQFN3x3-16hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

1hXu嘉泰姆

20hXu嘉泰姆

1.8hXu嘉泰姆

28hXu嘉泰姆

0.75hXu嘉泰姆

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400hXu嘉泰姆

CXSD62109hXu嘉泰姆

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1hXu嘉泰姆

2hXu嘉泰姆

20hXu嘉泰姆

1.8hXu嘉泰姆

28hXu嘉泰姆

0.75hXu嘉泰姆

5hXu嘉泰姆

400hXu嘉泰姆

CXSD62110hXu嘉泰姆

QFN3x3-20hXu嘉泰姆

TQFN3x3-16hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

2hXu嘉泰姆

20hXu嘉泰姆

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28hXu嘉泰姆

1.8|1.5|0.5hXu嘉泰姆

5hXu嘉泰姆

740hXu嘉泰姆

CXSD62111hXu嘉泰姆

TQFN4x4-24hXu嘉泰姆

|QFN3x3-20hXu嘉泰姆

CMhXu嘉泰姆

1hXu嘉泰姆

2hXu嘉泰姆

15hXu嘉泰姆

5hXu嘉泰姆

28hXu嘉泰姆

0.5hXu嘉泰姆

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3000hXu嘉泰姆

CXSD62112hXu嘉泰姆

TDFN3x3-10hXu嘉泰姆

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1hXu嘉泰姆

1hXu嘉泰姆

20hXu嘉泰姆

1.8hXu嘉泰姆

28hXu嘉泰姆

0.5hXu嘉泰姆

5hXu嘉泰姆

250hXu嘉泰姆

CXSD62113|ChXu嘉泰姆

TQFN3x3-20hXu嘉泰姆

COThXu嘉泰姆

1hXu嘉泰姆

2hXu嘉泰姆

15hXu嘉泰姆

6hXu嘉泰姆

25hXu嘉泰姆

2hXu嘉泰姆

NhXu嘉泰姆

550hXu嘉泰姆

CXSD62113EhXu嘉泰姆

TQFN 3x3 20hXu嘉泰姆

COThXu嘉泰姆

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2hXu嘉泰姆

11hXu嘉泰姆

6hXu嘉泰姆

25hXu嘉泰姆

2hXu嘉泰姆

NhXu嘉泰姆

550hXu嘉泰姆

CXSD62114hXu嘉泰姆

TQFN3x3-20hXu嘉泰姆

COThXu嘉泰姆

2hXu嘉泰姆

2hXu嘉泰姆

11hXu嘉泰姆

5.5hXu嘉泰姆

25hXu嘉泰姆

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NhXu嘉泰姆

280hXu嘉泰姆

CXSD62115hXu嘉泰姆

QFN4x4-24hXu嘉泰姆

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0.85hXu嘉泰姆

12hXu嘉泰姆

5000hXu嘉泰姆

CXSD62116A|B|ChXu嘉泰姆

SOP-8PhXu嘉泰姆

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1hXu嘉泰姆

1hXu嘉泰姆

20hXu嘉泰姆

2.9hXu嘉泰姆

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16000hXu嘉泰姆

CXSD62117hXu嘉泰姆

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CXSD62121AhXu嘉泰姆

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