CXES4275CXES4275A集成了高边N沟道MOSFET和低边N沟道MOSFET以及自适应死区控制。CXES4275 CXES4275A具有内置的三态脉冲宽度调制输入功能，可支持多个脉冲宽度调制控制器。当PWM输入信号保持三态时，三态函数在不考虑ZC函数的情况下关闭高侧MOSFET，打开低侧MOSFET。该装置还配备了上电复位（POR）和使控制功能成为一个单一的包和准确的电流限制。该器件的过流保护通过使用低边MOSFET的RDS（ON）上的电压降来监测输出电流，从而消除了对高效率和低成本的电流传感电阻的需求。带滞后的POR电路监测VCC电源电压，以便在通电/断电时启动/关闭IC。CXES4275 CXES4275A也可以由其他电源系统启用或禁用。将EN引脚拉高或拉低将打开或关闭设备。
·车辆识别号的4.5V~25V输入范围
·VCC引脚上电复位监控
·APW8703-10A（峰值），8A（连续）输出电流标度
·APW8706高达8A（峰值），6A（连续）输出电流标度
·APW8707高达25A（峰值），13A（连续）输出电流标度
·可调过流保护阈值
·高达1.5MHz的脉宽调制操作
·内置三态PWM输入功能
·内置定时控制功能
·内置N-CH MOSFETforhighside，N-CH MOSFET for low side
·跳过模式操作
·过温保护
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[ CXES4275 ]
目录
7.相关产品
产品概述 返回TOP
The CXES4275 CXES4275A CXES4276 integrates a high-side N-channel MOSFET and a low-side N-channel MOSFET with adaptive dead-time control. The CXES4275 CXES4275A CXES4276 have a built-in tri-state PWM input function which can support a number of PWM controllers. When the PWM input signal stays tristate, the tri-state function shuts off the high-side MOSFET and turns on the low-side MOSFET without consider ZC function. The device is also equipped with Power-OnReset(POR) and enable control functions into a single package and accurate current limit. The device over-current protection monitors the output current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sensing resistor that features high efficiency and low cost. The POR circuit with hysteresis monitors VCC supply voltage to start up/shutdown the IC at power-on/off. The CXES4275 CXES4275A CXES4276 also can be enabled or disabled by other power system. Pulling the EN pin high or low will turn on or shut off the device.
产品特点 返回TOP
· 4.5V ~ 5.5V Input Range for VCC & PVCC
· 4.5V ~ 25V Input Range for VIN
· Power-On-Reset Monitoring on VCC Pin
· APW8703-Upto10A(peak), 8A (continuous) output current scale
· APW8706-Up to 8A (peak), 6A (continuous) output current scale
· APW8707-Up to 25A (peak), 13A (continuous) output current scale
· Adjustable Over-Current Protection Threshold
· Up to 1.5MHz PWM operation
· Built-in Tri-State PWM input Function
· Built in EN Timing Control function
· Buildin N-CH MOSFETforhighside, N-CH MOSFET for low side
· Skip Mode Operation
· Over-Temperature Protection
· TQFN 4x4-23P package and TQFN 5x5-30 packages
· Lead Free and Green Devices Available (RoHS Compliant)
应用范围 返回TOP
· Desktops
· Graphics Cards
· Severs
· Portable/Notebook Regulators
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品......
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Products > Switch > Power Distribution Controller |
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Part_No |
Package |
No.of Channel |
External Power Switch Type |
Input Voltage (V) |
Quescint Current (uA) |
Wrong Input Voltage Protection |
Inpute Voltage UVLO |
SCP |
OCP (A) |
OVP |
UVP |
EN |
High/ Low EN |
POK |
|
|
min |
max |
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|
SOP8 TDFN2x2-8 |
1 |
N-Channel MOSFET |
10 |
26 |
750 |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
|
|
TDFN3x3-10 |
1 |
N-Channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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|
TDFN3x3-10 |
1 |
N-channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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|
Switch> Analog Switch |
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|
Part_No |
Package & Pins |
VDD Voltage (V) |
IDD, Supply Current (mA) |
Input Voltage (max)(V) |
Power Switch On Resistance(milohm) |
Turn-On Time(ms) |
Turn-Off Time(ms) |
|
|
min |
max |
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|
WLCSP1.2x1.2-9 |
2.9 |
5.5 |
35 |
0~5.5 |
0.2 |
5 |
1 |
|
|
WLCSP1.2x0.8-6 |
1.5 |
5.5 |
20 |
1.5-5.5 |
22 |
4.4 |
36.5 |
|
|
WLCSP 1.42x0.92-6 |
1.7 |
3.6 |
0.5 |
VDD-5.5~VDD |
0.2 |
0.1 |
1 |
|
|
Switch> DrMOS |
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Part_No |
Package |
Description |
Topology |
# of PWM Outputs |
Drive Lout (A) |
Vin (V) |
Fmax (Khz) |
R-Top (milohm) |
R-Sync (milohm) |
Iq (No load) (uA) |
En pin |
Sync Pin |
PSM/ CCM pin |
|
|
min |
max |
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|
TQFN4 x4-23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
8 |
4.5 |
25 |
1500 |
25 |
7 |
90 |
Y |
N |
Y |
|
|
TQFN4x4 -23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
6 |
4.5 |
25 |
1500 |
30 |
12 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel |
MOSFET1 |
13 |
4.5 |
25 |
1500 |
9.7 |
5.2 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
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◀ 上一篇:CXES4274便携式多媒体设备的音频点击和弹出消除器连接到现有系统放大器的输出在启动和关闭期间提供低阻抗接地路径电源电压范围从1.7V到3.6V通过设定销可调整关闭时间
下一篇▶:CXES4275A
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