首页 > 产品中心 > 功率器件 > N沟道P沟道双极MOSFETs >CXMS5146采用先进的沟道技术和设计以低栅极电荷提供优秀的RSS（ON）是为锂离子电池保护电路而设计双N通道增强MOS场效应晶体管MOSFET1和MOSFET2的漏极是内部连接的沟槽技术超高密度电池设计极低阈值电压
CXMS5146采用先进的沟道技术和设计以低栅极电荷提供优秀的RSS（ON）是为锂离子电池保护电路而设计双N通道增强MOS场效应晶体管MOSFET1和MOSFET2的漏极是内部连接的沟槽技术超高密度电池设计极低阈值电压
48
CXMS5146是双N通道增强MOS场效应晶体管，不需要连接电路板上的漏极，因为MOSFET1和MOSFET2的漏极是内部连接的。采用先进的沟道技术和设计，以低栅极电荷提供优秀的RSS（ON）。本装置是为锂离子电池保护电路而设计的。CXMS5146在DFN2X2-4L包中提供。标准产品CXMS5146不含铅和卤素
沟槽技术
超高密度电池设计
对更高直流电流具有优异的导通电阻
极低阈值电压
产品手册
-
[ CXMS5146 ]
样品申请
产品简介
目录
产品概述 返回TOP
The CXMS5146 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The CXMS5146 is available in DFN2X2-4L package. Standard Product CXMS5146 is Pb-free and Halogen-free
产品特点 返回TOP
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2X2-4L
应用范围 返回TOP
Lithium-Ion battery protection circuit
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品......
| 场效应晶体管 N沟道MOS管 | |||||||||
| Product | Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | |||||
| (V) | (V) | (V) | (Ω) | (A) | (mm)(L×W) | ||||
| CX380N60T | N | 1 | 600 | ±30 | 4.5 | 0.36 | 10.6 | TO-220 | 22 x 10 |
| CX380N60TF | N | 1 | 600 | ±30 | 4.5 | 0.36 | 10.6 | TO-220F | 29 x 10 |
| CX380N60TG | N | 1 | 600 | ±30 | 4.5 | 0.36 | 10.6 | TO-252E-2 | 10 x 6.6 |
| CX470N60T | N | 1 | 600 | ±30 | 4.5 | 0.42 | 9.4 | TO-220 | 22 x 10 |
| CX470N60TF | N | 1 | 600 | ±30 | 4.5 | 0.42 | 9.4 | TO-220F | 29 x 10 |
| CX650N60T | N | 1 | 600 | ±30 | 4.5 | 0.55 | 7.3 | TO-220 | 22 x 10 |
| CX650N60TF | N | 1 | 600 | ±30 | 4.5 | 0.55 | 7.3 | TO-220F | 29 x 10 |
| CX650N60TG | N | 1 | 600 | ±30 | 4.5 | 0.55 | 7.3 | TO-252E-2 | 10 x 6.6 |
| CX650N60TN | N | 1 | 600 | ±30 | 4.5 | 0.55 | 7.3 | TO-251(IPAK) | 15.4 x 6.6 |
| CX01N10 | N | 1 | 100 | ±20 | 2.5 | 0.255 | 1.7 | SOT-23 | 2.9 x 2.4 |
| CX01N11 | N | 1 | 110 | ±20 | 2.5 | 0.25 | 1.8 | SOT-23-6L | 2.9 x 2.8 |
| CX07N60 | N | 1 | 600 | ±30 | 5 | 1 | 7 | TO-220 | 22 x 10 |
| CX07N60F | N | 1 | 600 | ±30 | 5 | 1 | 7 | TO-220F | 29 x 10 |
| CX07N65 | N | 1 | 650 | ±30 | 5 | 1.05 | 7 | TO-220 | 22 x 10 |
| CX07N65F | N | 1 | 650 | ±30 | 5 | 1 | 7 | TO-220F | 29 x 10 |
| CX12N65 | N | 1 | 650 | ±30 | 5 | 0.57 | 12 | TO-220 | 22 x 10 |
| CX12N65F | N | 1 | 650 | ±30 | 5 | 0.57 | 12 | TO-220F | 29 x 10 |
| CXMS5110 | N | 1 | 20 | ±8 | 1 | 0.04 | 3.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5111 | N | 1 | 20 | ±6 | 0.85 | 0.22 | 0.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5112 | N | 1 | 20 | ±6 | 0.85 | 0.22 | 0.89 | SOT-323 | 2.1 x 2.3 |
| CXMS5113 | N | 1 | 20 | ±8 | 1 | 0.027 | 3.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5114 | N | 1 | 20 | ±6 | 1 | 0.21 | 0.95 | SOT-723 | 1.2 x 1.2 |
| CXMS5115 | N | 1 | 20 | ±5 | 0.85 | 0.22 | 0.71 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5115B | N | 1 | 20 | ±5 | 0.85 | 0.22 | 0.71 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5116 | N | 1 | 20 | ±5 | 0.85 | 0.22 | 0.66 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5117 | N | 1 | 20 | ±10 | 1 | 0.42 | 0.54 | SOT-723 | 1.2 x 1.2 |
| CXMS5118 | N | 1 | 30 | ±20 | 3 | 0.043 | 4 | SOT-23 | 2.9 x 2.4 |
| CXMS5119 | N | 1 | 30 | ±20 | 2 | 0.057 | 3.1 | SOT-23 | 2.9 x 2.4 |
| CXMS5120 | N | 1 | 30 | ±20 | 3 | 0.039 | 5.7 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5121 | N | 1 | 30 | ±20 | 1.5 | 1.3 | 0.25 | SOT-723 | 1.2 x 1.2 |
| CXMS5122 | N | 1 | 30 | 20 | 2 | 0.025 | 5.7 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5123 | N | 1 | 30 | ±20 | 1.5 | 1.3 | 0.25 | SOT-323 | 2.1 x 2.3 |
| CXMS5124 | N | 1 | 30 | ±20 | 1.5 | 1.3 | 0.25 | SOT-523 | 1.6 x 1.6 |
| CXMS5125 | N | 1 | 20 | ±6 | 1 | 0.41 | 0.8 | SOT-523 | 1.6 x 1.6 |
| CXMS5126 | N | 1 | 20 | ±6 | 1 | 1.65 | 0.6 | SOT-523 | 1.6 x 1.6 |
| CXMS5127 | N | 1 | 45 | ±20 | 1.5 | 0.142 | 1.7 | SOT-23 | 2.9 x 2.4 |
| CXMS5128 | N | 1 | 20 | ±6 | 1 | 0.22 | 0.88 | SOT-523 | 1.6 x 1.6 |
| CXMS5129 | N | 1 | 60 | ±20 | 2 | 1.7 | 0.5 | SOT-23 | 2.9 x 2.4 |
| CXMS5130 | N | 1 | 60 | ±20 | 2 | 1.7 | 0.3 | SOT-323 | 2.1 x 2.3 |
| CXMS5131 | N | 2 | 20 | ±12 | 1 | 0.42 | 0.56 | SOT-363 | 2.1 x 2.3 |
| CXMS5132 | Dual N | 2 | 20 | ±6 | 0.85 | 0.22 | 0.89 | SOT-363 | 2.1 x 2.3 |
| CXMS5133 | Dual N | 2 | 20 | ±6 | 0.85 | 0.22 | 0.88 | SOT-563 | 1.6 x 1.6 |
| CXMS5134 | Dual N | 2 | 20 | ±10 | 1 | 0.0148 | 7 | TSSOP-8L | 3 x 6.4 |
| CXMS5135 | Dual N | 2 | 20 | ±10 | 1 | 0.0157 | 6.3 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5136 | Dual N | 2 | 20 | ±10 | 1 | 0.016 | 4.8 | PDFN2.9x2.8-8L | 2.9 x 2.8 |
| CXMS5137 | Dual N | 2 | 60 | ±20 | 2 | 1.7 | 0.32 | SOT-363 | 2.1 x 2.3 |
| CXMS5138 | Dual N | 2 | 20 | ±10 | 1 | 0.022 | 5 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5139 | N | 2 | 20 | ±10 | 1 | 0.016 | 6.3 | SOT-23-6 | 2.92 x 2.8 |
| CXMS5140 | Dual N | 2 | 20 | ±10 | 1 | 0.022 | 5.1 | TSSOP-8L | 3 x 6.4 |
| CXMS5141 | Dual N | 2 | 20 | ±12 | 1 | 0.018 | 6 | WLCSP-4L | 1.47 x 1.47 |
| CXMS5142 | Dual N | 2 | 20 | ±10 | 1 | 0.015 | 7 | TSSOP-8L | 3 x 6.4 |
| CXMS5143 | Dual N | 2 | 20 | ±12 | 1 | 0.013 | 6 | WLCSP-4L | 1.47 x 1.47 |
| CXMS5144 | Dual N | 2 | 12 | ±10 | 1.2 | 0.0095 | 6 | WLCSP-4L | 1.47 x 1.47 |
| CXMS5145 | Dual N | 2 | 20 | ±10 | 1 | 0.055 | 2.6 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5146 | Dual N | 2 | 20 | ±12 | 1 | 0.012 | 6 | DFN2020-4L | 2.0 x 2.0 |
| CXMS5147 | Dual N | 2 | 20 | ±10 | 1 | 0.0175 | 6.3 | TSOT-23-6L | 2.9 x 2.8 |
| CXMS5148 | N | 2 | 20 | ±10 | 1 | 0.0095 | 11 | PDFN3x3-8L | 2.9 x 2.8 |
| CXMS5149 | Dual N | 2 | 30 | ±20 | 2.2 | 0.033 | 6.8 | SOP-8L | 4.9 x 6.0 |
| CXMS5150 | Dual N | 2 | 60 | ±20 | 2 | 1.7 | 0.3 | SOT-563 | 1.6 x 1.6 |
◀ 上一篇:CXMS5145 N沟道增强型MOS场效应晶体管采用先进的沟道技术和设计低栅极电荷提供优良的RDS（ON）适用于DC-DC转换电源开关和充电电路沟槽技术超高密度电池设计优良的电阻极低阈值电压
下一篇▶:CXMS5147采用沟道技术和设计低栅极电荷提供优秀的RDS（ON）用于DC-DC转换电源开关和充电电路N沟道增强MOS场效应晶体管沟槽技术超高密度电池设计高直流电流的优良导通电阻极低阈值电压
发表评论
