CXMS5211 CXMS5219SG系列双P沟道增强型场效应晶体管，采用高密度DMOS沟道技术制造，主要用于减小通态电阻。这个装置特别适合低电压。
l-30V/-6A RDS（开）=52mΩ@VGS=-10V，ID=-6A RDS（开）=67mΩ@VGS=-4.5V，ID=-4A
超低导通电阻高密度电池设计
-
[ CXMS5211 ]
目录
产品概述 返回TOP
CXMS5219SG CXMS5211 Series Dual P-channel enhancement mode field-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage .
产品特点 返回TOP
l -30V/-6A RDS(ON) =52mΩ@ VGS=-10V,ID=-6A RDS(ON) =67mΩ@ VGS=-4.5V,ID=-4A
l High Density Cell Design For Ultra Low On-Resistance
l Surface mount package:SOP8
应用范围 返回TOP
l Power management
l Load switch
l Battery protection
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品......
|
Part |
Mode |
VDS(Max) |
VGS |
ID(Max) |
RDS(on) |
Application |
Package |
|
Number |
|||||||
|
P channel |
-20V |
-8V |
-2.8A |
93mΩ |
①②③④⑤ |
SOT23/SOT23-3 |
|
|
CXMS5214-N |
P channel |
-20V |
-12V |
-3.1A |
77mΩ |
①②③④⑤ |
SOT23 |
|
P channel |
-30V |
-12V |
-4.2A |
55mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
CXMS5215-N |
P channel |
-30V |
-20V |
-2.9A |
92mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
P channel |
-30V |
-20V |
-4.1A |
46mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
P channel |
-30V |
-20V |
-6A |
46mΩ |
①②③④⑤⑥⑦⑨ |
SOP8/SOT89-3 |
|
|
Double P |
-30V |
-20V |
-6A |
53mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
Double P |
-30V |
-20V |
-6A |
46mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection |
|||||||
◀ 上一篇:CXMS5210 CXMS5218双P沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小通态电阻适合于低压应用和低功耗
下一篇▶:MOSFET for LED Screen HV BJT (LED屏专用MOS HV BJT):CXMS5210 CXMS5211 CXMS5212 CX13003T CX13003TZ
| 头条信息 |
|---|
