CXMS5210 CXMS5218系列双P沟道增强型场效应晶体管，采用高密度DMOS沟道技术制造，主要用于减小通态电阻。这种装置特别适合于低压应用和低功耗
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[ CXMS5210 ]
目录
产品概述 返回TOP
CXMS5218SG CXMS5210 Series Dual P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation .
产品特点 返回TOP
z -30V/-6A RDS(ON) =52mΩ@ VGS=-10V,ID=-6A RDS(ON) =67mΩ@ VGS=-4.5V,ID=-4A
z High Density Cell Design For Ultra Low On-Resistance
z Surface mount package:SOP8
应用范围 返回TOP
z Power management
z Load switch
z Battery protection
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产品封装图 返回TOP
电路原理图 返回TOP
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|
Part |
Mode |
VDS(Max) |
VGS |
ID(Max) |
RDS(on) |
Application |
Package |
|
Number |
|||||||
|
P channel |
-20V |
-8V |
-2.8A |
93mΩ |
①②③④⑤ |
SOT23/SOT23-3 |
|
|
CXMS5214-N |
P channel |
-20V |
-12V |
-3.1A |
77mΩ |
①②③④⑤ |
SOT23 |
|
P channel |
-30V |
-12V |
-4.2A |
55mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
CXMS5215-N |
P channel |
-30V |
-20V |
-2.9A |
92mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
P channel |
-30V |
-20V |
-4.1A |
46mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
P channel |
-30V |
-20V |
-6A |
46mΩ |
①②③④⑤⑥⑦⑨ |
SOP8/SOT89-3 |
|
|
Double P |
-30V |
-20V |
-6A |
53mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
Double P |
-30V |
-20V |
-6A |
46mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection |
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◀ 上一篇:P-Channel 1.25-W, 2.5-V MOSFET CXMS5201
下一篇▶:CXMS5211 CXMS5219SG系列双P沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小通态电阻特别适合低电压超低导通电阻高密度电池设计
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