CXCP5367EThe CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
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[ CXCP5367E ]
目录
产品概述 返回TOP
The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
产品特点 返回TOP
● VDS = -12V,ID =-2.0A
RDS(ON)<130mΩ @ VGS =-4.5V
RDS(ON)<175mΩ @ VGS =-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
应用范围 返回TOP
● Battery protection
● Load switch
● Power management
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
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单P沟道低压MOS场效应管 |
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型号 |
沟道 |
VDS |
VGS |
VTH |
ID |
IDM |
RDS(on) |
封装 |
|
(Max) |
(Typ) |
(Max) |
(Max) |
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|
P沟道 |
-50V |
20V |
-2.0V |
-0.13A |
-0.52A |
8mΩ |
SOT23 |
|
|
P沟道 |
-12V |
-8V |
-1.0V |
-8A |
-28A |
28mΩ |
DFN2*2-6 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-16A |
-65A |
18mΩ |
DNF2*2-6 |
|
|
P沟道 |
-20V |
-10V |
-0.65V |
-3A |
-10A |
65mΩ |
SOT23、SOT23-3L |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-2.8A |
-10A |
83mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-6V |
-0.45V |
-0.8A |
-1.6A |
350mΩ |
SOT-323、SOT-523、SOT-723 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-2.8A |
-10A |
85mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-6V |
-0.45V |
-0.8A |
-4A |
350mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-6V |
-0.45V |
-0.8A |
-4A |
350mΩ |
DFN1006-3L |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-2A |
-7A |
95mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-10V |
-0.65V |
-3A |
-6A |
65mΩ |
SOT-323 |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-4.1A |
-15A |
39mΩ |
SOT23 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-4.0A |
-15A |
40mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-8A |
-32A |
39mΩ |
DFN2*2-6 |
|
|
P沟道 |
-60V |
-20V |
-3.0V |
-1.8A |
-7A |
170mΩ |
SOT-23-3L |
|
|
P沟道 |
-40V |
-20V |
-1.5V |
-5.3A |
-20A |
73mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-12V |
-12V |
-0.65V |
-6A |
-20A |
30mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-4.2A |
-30A |
50mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-4.2A |
-30A |
50mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-30V |
-20V |
-1.6V |
-2.5A |
-10A |
72mΩ |
SOT23 |
|
|
P沟道 |
-30V |
-12V |
-0.9V |
-4.6A |
-32A |
50mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-5.2A |
-30A |
50mΩ |
SOT-89-3L |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-4.2A |
-20A |
55mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-2.5A |
-10A |
118mΩ |
SOT23-3L、SOT23 |
|
|
P沟道带ESD |
-20V |
-10V |
-0.65V |
-4.0A |
-30A |
34mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-4.2A |
-30A |
50mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-12A |
-60A |
14mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.75V |
-15A |
-80A |
8mΩ |
SOP8 |
|
|
P沟道 |
-60V |
-20V |
-1.9V |
-12A |
-36A |
23mΩ |
SOP8 |
|
|
P沟道 |
-60V |
-20V |
-2.9V |
-6.5A |
-20A |
39mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-9.1A |
-50A |
15mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.7V |
-9.1A |
-50A |
17mΩ |
SOP8 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-16A |
-65A |
11.5mΩ |
SOP8 |
|
|
P沟道 |
-55V |
-20V |
-2.6V |
-5A |
-25A |
64mΩ |
SOP8 |
|
|
P沟道 |
-40V |
-20V |
-1.5V |
-6A |
-24A |
73mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-25A |
-70A |
6mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.9V |
-7A |
-28A |
30mΩ |
SOP8 |
|
|
P沟道 |
-40V |
-20V |
-2.0V |
-13A |
-52A |
12mΩ |
SOP8 |
|
|
P沟道 |
-40V |
-20V |
-1.9V |
-17.5A |
-70A |
7.5mΩ |
SOP8 |
|
|
P沟道 |
-40V |
-20V |
-2.0V |
-7.5A |
-40A |
30mΩ |
SOP8 |
|
|
双P沟道 |
-100V |
-20V |
-1.9V |
-4.5A |
-18A |
85mΩ |
SOP8 |
|
|
P沟道 |
-22V |
-8V |
-0.69V |
-3A |
-12A |
110mΩ |
DFN2*3-8 |
|
|
P沟道 |
-30V |
-20V |
-1V |
-5.0A |
-30A |
50mΩ |
SOT23-6L |
|
|
P沟道 |
-30V |
-20V |
-1.6V |
-5.1A |
-20A |
48mΩ |
SOP8 |
|
|
P沟道 |
-20V |
-10V |
-0.7V |
-5A |
-20A |
60mΩ |
SOP8 |
|
|
P沟道 |
-20V |
-12V |
-0.8V |
-7A |
-40A |
21mΩ |
SOP8 |
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◀ 上一篇:CXCP5367DR是P通道逻辑增强型功率场效应晶体管采用高单元密度DMOS沟道技术制造适合于最小化导通电阻
下一篇▶:CXCP5367KR采用先进的沟道技术在低至2.5V的栅极电压下提供优良的RDS（ON）低栅极电荷和操作适合用作负载开关或在PWM应用中使用
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