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首页 > 产品中心 > 电源管理 > DC降压型转换器 > Buck降压型芯片 >CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V
CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V
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CXSD62104集成了双降压、恒定时间、同步PWM控制器(为每个通道驱动双N通道mosfet)和
两个低损耗稳压器以及各种保护装置集成到一个芯片中。PWM控制器降低电池的高电压以产生NB的低电压应用。PWM1和PWM2的输出可以从2V调整到5.5V通过设置一个从VOUTx到GND的电阻分压器。线性调节器为备用电源提供5V和3.3V输出

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V
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产品简介

目录Rti嘉泰姆

1.产品概述                       2.产品特点Rti嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 Rti嘉泰姆
5.产品封装图                     6.电路原理图                   Rti嘉泰姆
7.功能概述                        8.相关产品Rti嘉泰姆

一,产品概述(General Description)         Rti嘉泰姆

        The CXSD62104  integrates dual step-down, constant-ontime, synchronousRti嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) andRti嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWMRti嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NBRti嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5VRti嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulatorsRti嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulatorsRti嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher Rti嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its Rti嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.Rti嘉泰姆
     The CXSD62104 provides excellent transient response and accurate DC Rti嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), Rti嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with Rti嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly Rti嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modeRti嘉泰姆

 maintains the switching frequency above 25KHz, which eliminates noise in audio applications.Rti嘉泰姆

     The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputRti嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB Rti嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. Rti嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge Rti嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and Rti嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chipRti嘉泰姆

with low quiescent current close to zero.Rti嘉泰姆
      The CXSD62104 is available in a TQFN4x4-24A package.Rti嘉泰姆
二.产品特点(Features)Rti嘉泰姆
Wide Input Voltage Range from 6V to 25VRti嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-Rti嘉泰姆
racy Over-TemperatureRti嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putRti嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putRti嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputRti嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputRti嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangeRti嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage OutputRti嘉泰姆
Built-In POR Control Scheme ImplementedRti嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWMRti嘉泰姆
(with Selectable Ultrasonic Operation)Rti嘉泰姆
Constant-On-Time Control Scheme with FrequencyRti嘉泰姆
Compensation for PWM ModeRti嘉泰姆
Selectable Switching Frequency in PWM ModeRti嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-Rti嘉泰姆
Stop for PWM Outputs and LDO OutputsRti嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETRti嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)Rti嘉泰姆
Built-in Power Good Indicators (PWMs)Rti嘉泰姆
Independent Enable Inputs (PWMs, LDO)Rti嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)Rti嘉泰姆

Adjustable Current-Limit Protection (PWMs)Rti嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)Rti嘉泰姆
Over-Temperature ProtectionRti嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) packageRti嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)
Rti嘉泰姆

三,应用范围 (Applications)Rti嘉泰姆

Notebook and Sub-Notebook ComputersRti嘉泰姆

Portable DevicesRti嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesRti嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesRti嘉泰姆
Graphic CardsRti嘉泰姆
Game ConsolesRti嘉泰姆
Telecommunications
Rti嘉泰姆

四.下载产品资料PDF文档 Rti嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持Rti嘉泰姆

 QQ截图20160419174301.jpgRti嘉泰姆

五,产品封装图 (Package)Rti嘉泰姆


blob.pngblob.pngRti嘉泰姆

六.电路原理图Rti嘉泰姆


blob.pngRti嘉泰姆

七,功能概述Rti嘉泰姆


Input Capacitor SelectionRti嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, selectRti嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMSRti嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors areRti嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-Rti嘉泰姆
side MOSFET with very low-impeadance PCB layout. Rti嘉泰姆
MOSFET SelectionRti嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs shouldRti嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:Rti嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFETRti嘉泰姆
driver will not charge the miller capacitor of this MOSFET.Rti嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. TheRti嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverRti嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutyRti嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-Rti嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerRti嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFETRti嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timeRti嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenRti嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.Rti嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitanceRti嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-Rti嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given byRti嘉泰姆
the following equations:Rti嘉泰姆
Layout ConsiderationRti嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.Rti嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrossRti嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionRti嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,Rti嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasiticRti嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andRti嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. AndRti嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction orRti嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negativeRti嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notRti嘉泰姆
recommended. Below is a checklist for your layout:Rti嘉泰姆
Layout Consideration (Cont.)Rti嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodesRti嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes asRti嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.Rti嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofRti嘉泰姆

CXSD62104Rti嘉泰姆

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0.8Rti嘉泰姆

5~12Rti嘉泰姆

2500Rti嘉泰姆

CXSD6296A|B|C|DRti嘉泰姆

SOP8PRti嘉泰姆

VMRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

25Rti嘉泰姆

3Rti嘉泰姆

13.2Rti嘉泰姆

0.6|0.8Rti嘉泰姆

5~12Rti嘉泰姆

1200Rti嘉泰姆

CXSD6297Rti嘉泰姆

TDFN3x3-10Rti嘉泰姆

VMRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

25Rti嘉泰姆

4Rti嘉泰姆

13.2Rti嘉泰姆

0.8Rti嘉泰姆

5~12Rti嘉泰姆

2000Rti嘉泰姆

CXSD6298Rti嘉泰姆

TDFN3x3-10Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

25Rti嘉泰姆

4.5Rti嘉泰姆

25Rti嘉泰姆

0.6Rti嘉泰姆

5~12Rti嘉泰姆

80Rti嘉泰姆

CXSD6299|ARti嘉泰姆

SOP-8PRti嘉泰姆

VMRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

25Rti嘉泰姆

4.5Rti嘉泰姆

13.2Rti嘉泰姆

0.8Rti嘉泰姆

5~12Rti嘉泰姆

16000Rti嘉泰姆

CXSD62100Rti嘉泰姆

TQFN3x3-10Rti嘉泰姆

VMRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

25Rti嘉泰姆

4.5Rti嘉泰姆

13.2Rti嘉泰姆

0.6Rti嘉泰姆

5~12Rti嘉泰姆

2500Rti嘉泰姆

CXSD62101|LRti嘉泰姆

TDFN3x3-10Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

30Rti嘉泰姆

3Rti嘉泰姆

25Rti嘉泰姆

0.8Rti嘉泰姆

5~12Rti嘉泰姆

2000Rti嘉泰姆

CXSD62102Rti嘉泰姆

TQFN3x3-16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

30Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.6Rti嘉泰姆

5Rti嘉泰姆

600Rti嘉泰姆

CXSD62102ARti嘉泰姆

TQFN 3x3 16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

30Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.6Rti嘉泰姆

5Rti嘉泰姆

600Rti嘉泰姆

CXSD62103Rti嘉泰姆

QFN4x4-24Rti嘉泰姆

VMRti嘉泰姆

2Rti嘉泰姆

1Rti嘉泰姆

50Rti嘉泰姆

4.5Rti嘉泰姆

13.2Rti嘉泰姆

0.6Rti嘉泰姆

5~12Rti嘉泰姆

5000Rti嘉泰姆

CXSD62104Rti嘉泰姆

TQFN4x4-24Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

15Rti嘉泰姆

6Rti嘉泰姆

25Rti嘉泰姆

2Rti嘉泰姆

NRti嘉泰姆

550Rti嘉泰姆

CXSD62105Rti嘉泰姆

TQFN4x4-24Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

15Rti嘉泰姆

6Rti嘉泰姆

25Rti嘉泰姆

2Rti嘉泰姆

NRti嘉泰姆

550Rti嘉泰姆

CXSD62106|ARti嘉泰姆

TQFN4x4-4Rti嘉泰姆

TQFN3x3-20Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

20Rti嘉泰姆

3Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

800Rti嘉泰姆

CXSD62107Rti嘉泰姆

TQFN3x3-16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

20Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

400Rti嘉泰姆

CXSD62108Rti嘉泰姆

QFN3.5x3.5-14Rti嘉泰姆

TQFN3x3-16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

20Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

400Rti嘉泰姆

CXSD62109Rti嘉泰姆

TQFN3x3-16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

20Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

400Rti嘉泰姆

CXSD62110Rti嘉泰姆

QFN3x3-20Rti嘉泰姆

TQFN3x3-16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

20Rti嘉泰姆

3Rti嘉泰姆

28Rti嘉泰姆

1.8|1.5|0.5Rti嘉泰姆

5Rti嘉泰姆

740Rti嘉泰姆

CXSD62111Rti嘉泰姆

TQFN4x4-24Rti嘉泰姆

|QFN3x3-20Rti嘉泰姆

CMRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

15Rti嘉泰姆

5Rti嘉泰姆

28Rti嘉泰姆

0.5Rti嘉泰姆

NRti嘉泰姆

3000Rti嘉泰姆

CXSD62112Rti嘉泰姆

TDFN3x3-10Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

20Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.5Rti嘉泰姆

5Rti嘉泰姆

250Rti嘉泰姆

CXSD62113|CRti嘉泰姆

TQFN3x3-20Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

15Rti嘉泰姆

6Rti嘉泰姆

25Rti嘉泰姆

2Rti嘉泰姆

NRti嘉泰姆

550Rti嘉泰姆

CXSD62113ERti嘉泰姆

TQFN 3x3 20Rti嘉泰姆

COTRti嘉泰姆

2Rti嘉泰姆

2Rti嘉泰姆

11Rti嘉泰姆

6Rti嘉泰姆

25Rti嘉泰姆

2Rti嘉泰姆

NRti嘉泰姆

550Rti嘉泰姆

CXSD62114Rti嘉泰姆

TQFN3x3-20Rti嘉泰姆

COTRti嘉泰姆

2Rti嘉泰姆

2Rti嘉泰姆

11Rti嘉泰姆

5.5Rti嘉泰姆

25Rti嘉泰姆

2Rti嘉泰姆

NRti嘉泰姆

280Rti嘉泰姆

CXSD62115Rti嘉泰姆

QFN4x4-24Rti嘉泰姆

VMRti嘉泰姆

2Rti嘉泰姆

1Rti嘉泰姆

60Rti嘉泰姆

3.1Rti嘉泰姆

13.2Rti嘉泰姆

0.85Rti嘉泰姆

12Rti嘉泰姆

5000Rti嘉泰姆

CXSD62116A|B|CRti嘉泰姆

SOP-8PRti嘉泰姆

VMRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

20Rti嘉泰姆

2.9Rti嘉泰姆

13.2Rti嘉泰姆

0.8Rti嘉泰姆

12Rti嘉泰姆

16000Rti嘉泰姆

CXSD62117Rti嘉泰姆

SOP-20Rti嘉泰姆

VMRti嘉泰姆

2Rti嘉泰姆

2Rti嘉泰姆

30Rti嘉泰姆

10Rti嘉泰姆

13.2Rti嘉泰姆

1Rti嘉泰姆

12Rti嘉泰姆

5000Rti嘉泰姆

CXSD62118Rti嘉泰姆

TDFN3x3-10Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

1Rti嘉泰姆

25Rti嘉泰姆

1.8Rti嘉泰姆

28Rti嘉泰姆

0.7Rti嘉泰姆

5Rti嘉泰姆

250Rti嘉泰姆

CXSD62119Rti嘉泰姆

TQFN3x3-20Rti嘉泰姆

COTRti嘉泰姆

2Rti嘉泰姆

1Rti嘉泰姆

40Rti嘉泰姆

1.8Rti嘉泰姆

25Rti嘉泰姆

REFIN SettingRti嘉泰姆

5Rti嘉泰姆

700Rti嘉泰姆

CXSD62120Rti嘉泰姆

QFN 3x3 20Rti嘉泰姆

TQFN 3x3 16Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

20Rti嘉泰姆

3Rti嘉泰姆

28Rti嘉泰姆

1.8|1.5 1.35|1.2 0.5Rti嘉泰姆

5Rti嘉泰姆

800Rti嘉泰姆

CXSD62121ARti嘉泰姆

TQFN3x3 20Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

15Rti嘉泰姆

3Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

220Rti嘉泰姆

CXSD62121BRti嘉泰姆

TQFN3x3 20Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

15Rti嘉泰姆

3Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

220Rti嘉泰姆

CXSD62121Rti嘉泰姆

TQFN3x3-20Rti嘉泰姆

COTRti嘉泰姆

1Rti嘉泰姆

2Rti嘉泰姆

20Rti嘉泰姆

3Rti嘉泰姆

28Rti嘉泰姆

0.75Rti嘉泰姆

5Rti嘉泰姆

180Rti嘉泰姆

 Rti嘉泰姆