CXMS5225采用先进的沟道技术，在低至2.5V的栅极电压下提供优良的RDS（ON）、低栅极电荷和操作。该设备适合用作负载开关或在PWM应用中使用
● VDS = -20V,
ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V
RDS(ON) < 110mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
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[ CXMS5225 ]
目录
1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）
一.产品概述
The CXMS5225 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
二.产品特点
● VDS = -20V,
ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V
RDS(ON) < 110mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
三.应用范围
●PWM applications
●Load switch
●Power management
四.技术规格书（产品PDF)
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
五.产品封装图
六.电路原理图
七.相关芯片选择指南
| MOSFET及分立器件>>金属氧化物半导体场效应管(MOSFET) | ||||||
| Part No. | Mode | VDS(Max.) | ID(Max.) | RDS(on)(Max.) | Package | Reference |
| CXMS5225 | P-Channel | -20V | -3A | 64mΩ | SOT23 | APM2301 SI2301 |
| CXMS5226 | P-Channel | -20V | -4.1A | 39mΩ | SOT23 | APM2305 SI2305 |
| CXMS5227 | P-Channel | -30V | -4.1A | 55mΩ | SOT23 | 3407 2307 |
| CXMS5228 | P-Channel | -30V | -4.2A | 50mΩ | SOT23 | AO3401 2303 |
| CXMS5229 | P-Channel | -30V | -5.1A | 48mΩ | SOP8 | 9435 |
| CXMS5230 | Dual P-Channel | -30V | -5.1A | 48mΩ | SOP8 | 4953 |
| CXMS5231 | P-Channel | -30V | -9.1A | 15mΩ | SOP8 | 4435 |
| CXMS5248 | P-Channel | -300V | -170mA | 17Ω | TO92 | BSP304 |
| CXMS5232 | N-Channel | 20V | 2.9A | 30mΩ | SOT23 | SI2302 |
| CXMS5233 | Dual N-Channel | 20V | 4A | 19.5mΩ | SOT23-6 | 8205 |
| CXMS5234 | N-Channel | 20V | 5A | 22mΩ | SOT23 | |
| CXMS5235A | Dual N-Channel | 20V | 6A | 21mΩ | TSSOP8 | 8205A |
| CXMS5235B | Dual N-Channel | 20V | 6A | 16mΩ | TSSOP8 SOT23-6 | |
| CXMS5236 | Dual N-Channel | 20V | 6A | 26mΩ | SOP8 | 9926 |
| CXMS5237E | Dual N-Channel(ESD) | 20V | 6A | 17mΩ | TSSOP8 | 8205E |
| CXMS5238NE | Dual N-Channel(ESD) | 20V | 6A | 17mΩ | SOT23-6 | 8205E |
| CXMS5239E | Dual N-Channel(ESD) | 20V | 7A | 15mΩ | TSSOP8 | 8205E |
| CXMS5240NE | Dual N-Channel(ESD) | 20V | 7A | 15mΩ | SOT23-6 | 8205E |
| CXMS5241 | N-Channel | 30V | 3.6A | 39mΩ | SOT23 | |
| CXMS5242 | N-Channel | 30V | 5.8A | 28mΩ | SOT23 | 3400 |
| CXMS5243 | N-Channel | 30V | 5.8A | 25.5mΩ | SOT23 | |
| CXMS5244K | N-Channel | 30V | 50A | 8mΩ | TO252 | |
| CXMS5245K | N-Channel(ESD) | 50V | 220mA | 1Ω | SOT23 | |
| CXMS5246 | N-Channel | 60V | 115mA | 1.1Ω | SOT23 | 2N7002 |
| CXMS5246K | N-Channel(ESD) | 60V | 300mA | 1Ω | SOT23 | 2N7002K |
| CXMS5247 | N-Channel | 200V | 300mA | 5Ω | TO92 | BS108 |
| CXMS5249 | Dual N-Channel | 12V | 21A | 5.5mΩ | CSP6 | EFC6611R |
◀ 上一篇:CXMS5217系列P沟道增强型场效应晶体管采用高单元密度DMOS沟道技术制造用于减小通态电阻适合于低电压应用和低功耗超低导通电阻高密度电池设计
下一篇▶:CXMS5226采用先进的沟道技术在低至2.5V的栅极电压下提供优良的RDS（ON）低栅极电荷和操作适合用作负载开关或在PWM应用中使用高功率和电流处理能力
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