The CXMS5159 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5159 is Pb-free.
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[ CXMS5159 ]
目录
1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）
一.产品概述
The CXMS5159 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5159 is Pb-free.
二.产品特点
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2x2-6L
三.应用范围
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
四.技术规格书（产品PDF)
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
五.产品封装图
六.电路原理图
七.相关芯片选择指南 更多同类产品.....
| 场效应晶体管 P沟道MOS管 | |||||||||
| Product | Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | |||||
| (V) | (V) | (V) | (Ω) | (A) | (mm)(L×W) | ||||
| CXMS5151 | P | 1 | -20 | ±8 | -1 | 0.11 | -1.4 | SOT-323 | 2.1 x 2.3 |
| CXMS5152 | P | 1 | -12 | ±12 | -0.9 | 0.022 | -5.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5153 | P | 1 | -12 | ±8 | -0.9 | 0.031 | -3.5 | SOT-23 | 2.9 x 2.4 |
| CXMS5154 | P | 1 | -12 | ±8 | -1 | 0.015 | -7.4 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5155 | P | 1 | -12 | ±8 | -0.9 | 0.08 | -1.5 | SOT-323 | 2.1 x 2.3 |
| CXMS5156 | P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.9 | DFN3020-8L | 3.0 x 2.0 |
| CXMS5156B | P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.7 | DFN3020-8L | 3.0 x 2.0 |
| CXMS5157 | P+Diode | 1 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5158D | P | 1 | -20 | ±12 | -1 | 0.042 | -4 | DFN3030-8L | 3.0 x 3.0 |
| CXMS5159 | P | 1 | -20 | ±8 | -0.9 | 0.05 | -4.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5160 | P | 1 | -20 | ±8 | -0.8 | 0.081 | -2.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5161 | P | 1 | -20 | ±5 | -0.9 | 0.48 | -0.62 | SOT-523 | 1.6 x 1.6 |
| CXMS5162 | P | 1 | -20 | ±12 | -1 | 0.056 | -2.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5163 | P | 1 | -20 | ±5 | -0.8 | 0.495 | -0.6 | SOT-723 | 1.2 x 1.2 |
| CXMS5164 | P | 1 | -20 | ±12 | -1 | 0.047 | -3.3 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5165 | P | 1 | -20 | ±12 | -1 | 0.096 | -2.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5166 | P | 1 | -20 | ±5 | -0.9 | - | -0.51 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5166B | P | 1 | -20 | ±5 | -0.9 | 0.44 | -0.51 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5167 | P | 1 | -20 | ±8 | -1 | 0.017 | -6.2 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5168 | P | 1 | -20 | ±12 | -1 | 0.043 | -4 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5169 | P | 1 | -20 | ±12 | -1 | 0.043 | -3.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5170 | P | 1 | -20 | ±8 | -1 | 0.081 | -2.4 | SOT-23 | 2.9 x 2.4 |
| CXMS5171 | P | 1 | -20 | ±8 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5171A | P | 1 | -20 | ±12 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5172 | P | 1 | -30 | ±20 | -2.5 | 0.079 | -3.8 | SOP-8L | 4.9 x 6.0 |
| CXMS5173 | P | 1 | -30 | ±20 | -2.5 | 0.083 | -4.1 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5174 | P | 1 | -30 | ±20 | -2.5 | 0.08 | -2.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5175 | P | 1 | -30 | ±20 | -2.5 | 0.077 | -3.1 | SOT-23 | 2.9 x 2.4 |
| CXMS5176 | P | 1 | -30 | ±12 | -1.5 | 0.043 | -4.6 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5177 | P | 1 | -30 | ±20 | -3 | 0.053 | -3.7 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5178 | Dual P | 2 | -30 | ±12 | -1.4 | 0.045 | -5.6 | SOP-8L | 4.9 x 6.0 |
| CXMS5179 | Dual P | 2 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 |
| CXMS5180 | P | 1 | -50 | ±20 | -2 | 3.5 | -0.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5181 | P | 1 | -20 | ±12 | -1 | 0.025 | -5.7 | SOT-23-3 | 2.9 x 2.8 |
| CXMS5182 | P | 1 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 |
| CXMS5182A | P | 1 | -30 | ±20 | -3 | 0.043 | -5.4 | SOP-8L | 4.9 x 6.0 |
| CXMS5183 | Dual P | 2 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5184 | Dual P | 2 | -20 | ±12 | -1 | 0.075 | -3.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5185 | Dual P | 2 | -20 | ±12 | -1 | 0.052 | -3.7 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5186 | Dual P | 2 | -20 | ±6 | -0.9 | 0.55 | -0.56 | SOT-563 | 1.6 x 1.6 |
| CXMS5187 | Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -3.6 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5188 | Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -4.6 | SOP-8L | 4.9 x 6.0 |
| CXMS5189 | Dual P | 2 | -20 | ±10 | -1 | 0.08 | -3.3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5190 | Dual P | 2 | -30 | ±20 | -2.5 | 0.07 | -3.8 | SOP-8L | 4.9 x 6.0 |
◀ 上一篇:CXMS5158D这种单P沟道MOSFET是采用沟道工艺生产的沟道工艺提供电阻性能增强型功率MOSFET用于手机应用中的大功率充电电路大功率开关应用
下一篇▶:CXMS5160用于DC-DC转换电源开关和充电电路是P沟道增强型MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS（ON）
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