输出电流1.5A高效率稳定电源CXSD62211瞬态响应HiSAT-COT控制PWM/PFM自动转换控制输出电压在0.8V~3.6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
目录7.相关产品 产品概述 返回TOP CXSD62211系列产品可对应陶瓷电容,内置了P沟道MOS驱动晶体管及N沟道 MOS开关晶体管的同步整流型降压DC/DC转换器。输出电压在0.8V~3.6V(±2.0%)之间,能在内部以0.05V的间隔设定。外接零部件只使用线圈和电容,即可得到输出电流1.5A的高效率,稳定电源。备有1.2MHz,3MHz的振荡频率,可以按应用目的选择最合适的频率。工作模式为瞬态响应优越的HiSAT-COT(*)控制,可以用MODE端子从PWM 控制或PWM/PFM自动转换控制中选择工作模式,实现了从轻负载到重负载整个区域内灵活的高速响应,低纹波率,高效率。通过在待机时使整个电路停止工作,可以把消耗电流抑制在1.0μA以下。软启动功能在0.30ms(TYP.) 即可使电压高速地上升。内置UVLO(Under Voltage Lock Out)功能,当输入电压在2.0V以下时,可以强制地使内部P沟道 MOS驱动晶体管停止工作。此外,型通过CL放电功能,在待机时使输出电容中的电荷放电。The CXSD62211 series is a group of synchronous-rectification type DC/DC converters with a built-in P-channel MOS driver transistor and N-channel MOS switching transistor, designed to allow the use of ceramic capacitors. Output voltage is internally set in a range from 0.8V to 3.6V (accuracy: ±2.0%) increments of 0.05V. The device provides a high efficiency, stable power supply with an output current of 1.5A to be configured using only a coil and two capacitors connected externally. Oscillation frequency is set to 1.2MHz or 3.0MHz can be selected for suiting to your particular application. The operation mode is HISAT-COT (*) control, which has an excellent transient response. PWM control or PWM/PFM auto switching control can be selected at the MODE pin, and a high-speed response, low ripple, and high efficiency are achieved across the entire load range (from light loads to heavy loads). During stand-by, all circuits are shutdown to reduce current consumption to as low as 1.0μA or less. As for the soft-start function as fast as 0.3ms in typical for quick turn-on. With the built-in UVLO (Under Voltage Lock Out) function, the internal P-channel MOS driver transistor is forced OFF when input voltage becomes 2.00V or lower. The B types integrate CL High Speed discharge function which enables the electric charge at the output capacitor CL to be discharged via the internal discharge. The package is the ultra-small 1.2mm × 1.4mm × h0.3mm (LGA-8B01). 产品特点 返回TOP 应用范围 返回TOP ●Mobile phones ●Bluetooth headsets ●Smart phones, Personal digital assistance ●Portable game consoles ●Digital still cameras, Camcorders ●Codeless phones ●Point-of-Load (POL) 技术规格书(产品PDF) 返回TOP 需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持! 产品封装图 返回TOP 电路原理图 返回TOP
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