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CXSD62106|A 同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT DDR2和DDR3内存提供完整的电源
发表时间:2020-04-22浏览次数:169
CXSD62106|A 同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT DDR2和DDR3内存提供完整的电源
 

目录Rkw嘉泰姆

1.产品概述                       2.产品特点Rkw嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 Rkw嘉泰姆
5.产品封装图                     6.电路原理图                   Rkw嘉泰姆
7.功能概述                        8.相关产品Rkw嘉泰姆

一,产品概述(General Description)         Rkw嘉泰姆
      The CXSD62106/A integrates a synchronous buck PWM controller to generateRkw嘉泰姆
VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It providesRkw嘉泰姆
a complete power supply for DDR2 and DDR3 memory system. It offers the lowestRkw嘉泰姆
total solution cost in system where space is at a premium.Rkw嘉泰姆
      The CXSD62106/A provides excellent transient response  and accurate DC Rkw嘉泰姆

voltage output in either PFM or PWM Mode. In Pulse Frequency Mode (PFM), the CXSD62106/A provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN4x4- 24A package, the Forced PWM Rkw嘉泰姆

Mode works nearly at con-stant frequency for low-noise requirements.Rkw嘉泰姆
The CXSD62106/A is equipped with accurate current-limit,output under-voltage,Rkw嘉泰姆

and output over-voltage protections.A Power-On-Reset function monitors the Rkw嘉泰姆

voltage on VCC prevents wrong operation during power on.The LDO is designed Rkw嘉泰姆

to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current Rkw嘉泰姆

up to 1.5A. It also incorporates current-limit and thermal shutdown protection.Rkw嘉泰姆

The output voltage of LDO tracks the voltage at VTTREF pin. An internal resistorRkw嘉泰姆

divider is used to provide a half voltage of VDDQ for VTTREF and VTT Voltage. Rkw嘉泰姆

The VTT output voltage is only requiring 20μF of ceramic output capacitance forRkw嘉泰姆

 stability and fast transient response. The S3 and S5 pins provide the sleep stateRkw嘉泰姆

 for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 andRkw嘉泰姆
S3 are both pulled low the device provides the soft-off for VTT and VTTREF.Rkw嘉泰姆
The CXSD62106/A is available in 4mmx4mm 24-pin TQFN package, and the Rkw嘉泰姆

CXSD62106A is available in 3mmx3mm 20-pin TQFN package.Rkw嘉泰姆
二.产品特点(Features)Rkw嘉泰姆
Buck Controller (VDDQ)Rkw嘉泰姆
·  High Input Voltages Range from 3V to 28V Input PowerRkw嘉泰姆
Provide 1.8V (DDR2), 1.5V (DDR3) or AdjustableRkw嘉泰姆
Output Voltage from 0.75V to 5.5VRkw嘉泰姆
- ±1% Accuracy Over-TemperatureRkw嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodeRkw嘉泰姆
Excellent Line and Load Transient ResponsesRkw嘉泰姆
PFM Mode for Increased Light Load EfficiencyRkw嘉泰姆
Constant-On-Time Controller SchemeRkw嘉泰姆
- Switching Frequency Compensation for PWMModeRkw嘉泰姆
- Adjustable Switching Frequency from 100kHzRkw嘉泰姆
to 550kHz in PWM Mode with DC Output CurrentRkw嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodeRkw嘉泰姆
S3 and S5 Pins Control The Device in S0, S3, or S4/S5 StateRkw嘉泰姆
Power Good MonitoringRkw嘉泰姆
70% Under-Voltage Protection (UVP)Rkw嘉泰姆
125% Over-Voltage Protection (OVP)Rkw嘉泰姆
Adjustable Current-Limit ProtectionRkw嘉泰姆
Using Sense Low-Side MOSFET RDS(ON)Rkw嘉泰姆
±1.5A LDO Section (VTT)Rkw嘉泰姆
Souring or Sinking Current up to 1.5ARkw嘉泰姆
Fast Transient Response for Output VoltageRkw嘉泰姆
Output Ceramic Capacitors Support at Least 10μF MLCCRkw嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by Internal DividerRkw嘉泰姆
±20mV Accuracy for VTT and VTTREFRkw嘉泰姆

Independent Over-Current-Limit (OCL) Rkw嘉泰姆

Thermal Shutdown ProtectionRkw嘉泰姆

QFN-24 4mmx4mm Thin Package (TQFN4x4-24A)Rkw嘉泰姆
for CXSD62106 and QFN-20 3mmx3mm ThinRkw嘉泰姆
Package (TQFN3x3-20) for CXSD62106ARkw嘉泰姆
Lead Free and Green Devices Available
Rkw嘉泰姆

三,应用范围 (Applications)Rkw嘉泰姆


DDR2, and DDR3 Memory Power SuppliesRkw嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationRkw嘉泰姆
四.下载产品资料PDF文档 Rkw嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持Rkw嘉泰姆

 QQ截图20160419174301.jpgRkw嘉泰姆

五,产品封装图 (Package)Rkw嘉泰姆


blob.pngblob.pngRkw嘉泰姆

六.电路原理图Rkw嘉泰姆


blob.pngRkw嘉泰姆

七,功能概述Rkw嘉泰姆


Layout Consideration (Cont.)Rkw嘉泰姆

· Keep the switching nodes (UGATE, LGATE, BOOT, and PHASE) away from sensitive small signal nodesRkw嘉泰姆
(VDDQSET, VTTREF, CS, and MODE) since these nodes are fast mov ing signals. Therefore, keep tracesRkw嘉泰姆
to these nodes as short as possible and there should be no other weak signal traces in parallel with thesesRkw嘉泰姆
traces on any layer.Rkw嘉泰姆
 The signals going through theses traces have both high dv/dt and high di/dt, with high peak charging andRkw嘉泰姆
discharging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be shortRkw嘉泰姆
and wide.Rkw嘉泰姆
Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Mini-Rkw嘉泰姆
mizing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.
ceramic capacitor near the drain of the high-side MOSFET as close as possible. The bulk capacitors areRkw嘉泰姆
also placednear the drain).Rkw嘉泰姆
The input capacitor should be near the drain of the up per MOSFET; the high quality ceramic decoupling ca-Rkw嘉泰姆
pacitor can be put close to the VCC and GND pins; the VTTREF decoupling capasitor should be close to theRkw嘉泰姆
VTTREF pin and GND; the VDDQ and VTT output ca-pacitors should be located right across their output pinRkw嘉泰姆
as clase as possible to the part to minimize parasitics.Rkw嘉泰姆
The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.Rkw嘉泰姆
· The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking. And PHASERkw嘉泰姆
pin traces are also the return path for UGATE. Connect this pin to the converter’s upper MOSFET source.Rkw嘉泰姆
· The CXSD62106/A used ripple mode control. Build the resistor divider close to the VDDQSET pin so that theRkw嘉泰姆
high imped ance trace is shorter when the output volt-age is in ad justable mode. And the VDDQSET pinRkw嘉泰姆
traces can’t be closed to the switching signal traces (UGATE, LGATE, BOOT, and PHASE)Rkw嘉泰姆
 The PGND trace should be a separate trace, and inde pendently go to the source of the low-side MOSFETsRkw嘉泰姆
for current limit accuracy.Decoupling capacitor, the resistor dividers, boot capacitors, and current limit stetting resistor should be close their pins. (For example, place the decouplingRkw嘉泰姆

八,相关产品              更多同类产品...... Rkw嘉泰姆


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5.5Rkw嘉泰姆

0.8Rkw嘉泰姆

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13.2Rkw嘉泰姆

1.2Rkw嘉泰姆

12Rkw嘉泰姆

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