CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

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发表时间：2020-04-22浏览次数：87

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

目录bDr嘉泰姆

1.产品概述         2.产品特点bDr嘉泰姆
3.应用范围       4.下载产品资料PDF文档 bDr嘉泰姆
5.产品封装图                     6.电路原理图             bDr嘉泰姆
7.功能概述       8.相关产品bDr嘉泰姆

一,产品概述(General Description) bDr嘉泰姆

The CXSD62104 integrates dual step-down, constant-ontime, synchronousbDr嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) andbDr嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWMbDr嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NBbDr嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5VbDr嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulatorsbDr嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulatorsbDr嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher bDr嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its bDr嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.bDr嘉泰姆
The CXSD62104 provides excellent transient response and accurate DC bDr嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), bDr嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with bDr嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly bDr嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modebDr嘉泰姆

maintains the switching frequency above 25KHz, which eliminates noise in audio applications.bDr嘉泰姆

The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputbDr嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB bDr嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. bDr嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge bDr嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and bDr嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chipbDr嘉泰姆

with low quiescent current close to zero.bDr嘉泰姆
The CXSD62104 is available in a TQFN4x4-24A package.bDr嘉泰姆
二.产品特点(Features)bDr嘉泰姆
Wide Input Voltage Range from 6V to 25VbDr嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-bDr嘉泰姆
racy Over-TemperaturebDr嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putbDr嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putbDr嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputbDr嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputbDr嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangebDr嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage OutputbDr嘉泰姆
Built-In POR Control Scheme ImplementedbDr嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWMbDr嘉泰姆
(with Selectable Ultrasonic Operation)bDr嘉泰姆
Constant-On-Time Control Scheme with FrequencybDr嘉泰姆
Compensation for PWM ModebDr嘉泰姆
Selectable Switching Frequency in PWM ModebDr嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-bDr嘉泰姆
Stop for PWM Outputs and LDO OutputsbDr嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETbDr嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)bDr嘉泰姆
Built-in Power Good Indicators (PWMs)bDr嘉泰姆
Independent Enable Inputs (PWMs, LDO)bDr嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)bDr嘉泰姆

Adjustable Current-Limit Protection (PWMs)bDr嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)bDr嘉泰姆
Over-Temperature ProtectionbDr嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) packagebDr嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)bDr嘉泰姆

三,应用范围 (Applications)bDr嘉泰姆

Notebook and Sub-Notebook ComputersbDr嘉泰姆

Portable DevicesbDr嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesbDr嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesbDr嘉泰姆
Graphic CardsbDr嘉泰姆
Game ConsolesbDr嘉泰姆
TelecommunicationsbDr嘉泰姆

四.下载产品资料PDF文档 bDr嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！bDr嘉泰姆

QQ截图20160419174301.jpg bDr嘉泰姆

五,产品封装图 (Package)bDr嘉泰姆

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六.电路原理图bDr嘉泰姆

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七,功能概述bDr嘉泰姆

Input Capacitor SelectionbDr嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, selectbDr嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMSbDr嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors arebDr嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-bDr嘉泰姆
side MOSFET with very low-impeadance PCB layout. bDr嘉泰姆
MOSFET SelectionbDr嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs shouldbDr嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:bDr嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFETbDr嘉泰姆
driver will not charge the miller capacitor of this MOSFET.bDr嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. ThebDr嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverbDr嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutybDr嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-bDr嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerbDr嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFETbDr嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timebDr嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenbDr嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.bDr嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitancebDr嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-bDr嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given bybDr嘉泰姆
the following equations:bDr嘉泰姆
Layout ConsiderationbDr嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.bDr嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrossbDr嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionbDr嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,bDr嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasiticbDr嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andbDr嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. AndbDr嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction orbDr嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negativebDr嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notbDr嘉泰姆
recommended. Below is a checklist for your layout:bDr嘉泰姆
Layout Consideration (Cont.)bDr嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodesbDr嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes asbDr嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.bDr嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofbDr嘉泰姆

CXSD62104bDr嘉泰姆

八,相关产品 更多同类产品...... bDr嘉泰姆

Switching Regulator > Buck ControllerbDr嘉泰姆
Part_No bDr嘉泰姆	Package bDr嘉泰姆	ArchibDr嘉泰姆 tectubDr嘉泰姆	PhasebDr嘉泰姆	No.ofbDr嘉泰姆 PWMbDr嘉泰姆 OutputbDr嘉泰姆	Output bDr嘉泰姆 CurrentbDr嘉泰姆 (A) bDr嘉泰姆	InputbDr嘉泰姆 Voltage (V) bDr嘉泰姆		ReferencebDr嘉泰姆 VoltagebDr嘉泰姆 (V) bDr嘉泰姆	Bias bDr嘉泰姆 VoltagebDr嘉泰姆 (V) bDr嘉泰姆	QuiescentbDr嘉泰姆 CurrentbDr嘉泰姆 (uA) bDr嘉泰姆
Part_No bDr嘉泰姆	Package bDr嘉泰姆	ArchibDr嘉泰姆 tectubDr嘉泰姆	PhasebDr嘉泰姆	No.ofbDr嘉泰姆 PWMbDr嘉泰姆 OutputbDr嘉泰姆	Output bDr嘉泰姆 CurrentbDr嘉泰姆 (A) bDr嘉泰姆	minbDr嘉泰姆	maxbDr嘉泰姆	ReferencebDr嘉泰姆 VoltagebDr嘉泰姆 (V) bDr嘉泰姆	Bias bDr嘉泰姆 VoltagebDr嘉泰姆 (V) bDr嘉泰姆	QuiescentbDr嘉泰姆 CurrentbDr嘉泰姆 (uA) bDr嘉泰姆
CXSD6273bDr嘉泰姆	SOP-14bDr嘉泰姆 QSOP-16bDr嘉泰姆 QFN4x4-16bDr嘉泰姆	VM bDr嘉泰姆	1 bDr嘉泰姆	1 bDr嘉泰姆	30bDr嘉泰姆	2.9 bDr嘉泰姆	13.2bDr嘉泰姆	0.9bDr嘉泰姆	12 bDr嘉泰姆	8000bDr嘉泰姆
CXSD6274bDr嘉泰姆	SOP-8bDr嘉泰姆	VM bDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	20bDr嘉泰姆	2.9 bDr嘉泰姆	13.2 bDr嘉泰姆	0.8bDr嘉泰姆	12bDr嘉泰姆	5000bDr嘉泰姆
CXSD6274CbDr嘉泰姆	SOP-8bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	20bDr嘉泰姆	2.9bDr嘉泰姆	13.2bDr嘉泰姆	0.8bDr嘉泰姆	12bDr嘉泰姆	5000bDr嘉泰姆
CXSD6275bDr嘉泰姆	QFN4x4-24bDr嘉泰姆	VMbDr嘉泰姆	2bDr嘉泰姆	1bDr嘉泰姆	60bDr嘉泰姆	3.1bDr嘉泰姆	13.2bDr嘉泰姆	0.6bDr嘉泰姆	12bDr嘉泰姆	5000bDr嘉泰姆
CXSD6276bDr嘉泰姆	SOP-8bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	20bDr嘉泰姆	2.2bDr嘉泰姆	13.2bDr嘉泰姆	0.8bDr嘉泰姆	5~12bDr嘉泰姆	2100bDr嘉泰姆
CXSD6276AbDr嘉泰姆	SOP-8bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	20bDr嘉泰姆	2.2bDr嘉泰姆	13.2bDr嘉泰姆	0.8bDr嘉泰姆	5~12bDr嘉泰姆	2100bDr嘉泰姆
CXSD6277/A/BbDr嘉泰姆	SOP8\|TSSOP8bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	5bDr嘉泰姆	5bDr嘉泰姆	13.2bDr嘉泰姆	1.25\|0.8bDr嘉泰姆	5~12bDr嘉泰姆	3000bDr嘉泰姆
CXSD6278bDr嘉泰姆	SOP-8bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	10bDr嘉泰姆	3.3bDr嘉泰姆	5.5bDr嘉泰姆	0.8bDr嘉泰姆	5bDr嘉泰姆	2100bDr嘉泰姆
CXSD6279BbDr嘉泰姆	SOP-14bDr嘉泰姆	VM bDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	10bDr嘉泰姆	5bDr嘉泰姆	13.2bDr嘉泰姆	0.8bDr嘉泰姆	12bDr嘉泰姆	2000bDr嘉泰姆
CXSD6280bDr嘉泰姆	TSSOP-24bDr嘉泰姆 \|QFN5x5-32bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	2bDr嘉泰姆	20bDr嘉泰姆	5bDr嘉泰姆	13.2bDr嘉泰姆	0.6bDr嘉泰姆	5~12bDr嘉泰姆	4000bDr嘉泰姆
CXSD6281NbDr嘉泰姆	SOP14bDr嘉泰姆 QSOP16bDr嘉泰姆 QFN-16bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	30bDr嘉泰姆	2.9bDr嘉泰姆	13.2bDr嘉泰姆	0.9bDr嘉泰姆	12bDr嘉泰姆	4000bDr嘉泰姆
CXSD6282bDr嘉泰姆	SOP-14bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	30bDr嘉泰姆	2.2bDr嘉泰姆	13.2bDr嘉泰姆	0.6bDr嘉泰姆	12bDr嘉泰姆	5000bDr嘉泰姆
CXSD6282AbDr嘉泰姆	SOP-14bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	30bDr嘉泰姆	2.2bDr嘉泰姆	13.2bDr嘉泰姆	0.6bDr嘉泰姆	12bDr嘉泰姆	5000bDr嘉泰姆
CXSD6283bDr嘉泰姆	SOP-14bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	1bDr嘉泰姆	25bDr嘉泰姆	2.2bDr嘉泰姆	13.2bDr嘉泰姆	0.8bDr嘉泰姆	12bDr嘉泰姆	5000bDr嘉泰姆
CXSD6284/AbDr嘉泰姆	LQFP7x7 48bDr嘉泰姆 TQFN7x7-48bDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	6bDr嘉泰姆	0.015bDr嘉泰姆	1.4bDr嘉泰姆	6.5bDr嘉泰姆	-bDr嘉泰姆	5bDr嘉泰姆	1800bDr嘉泰姆
CXSD6285bDr嘉泰姆	TSSOP-24PbDr嘉泰姆	VMbDr嘉泰姆	1bDr嘉泰姆	2bDr嘉泰姆	20bDr嘉泰姆	2.97bDr嘉泰姆	5.5bDr嘉泰姆	0.8bDr嘉泰姆	5~12bDr嘉泰姆	5000bDr嘉泰姆
bDr嘉泰姆

上一篇：两相电压模式和固定频率降压控制器CXSD62103从100kHz到800kHz的可编程脉宽调制开关频率无损耗低边MOSFET Ron电流传感

下一篇：电荷泵CXSD62105笔记本电脑的系统电源脉宽调制控制器集成了双降压恒时同步的脉宽调制控制器

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