CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

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发表时间：2020-04-22浏览次数：69

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

目录poA嘉泰姆

1.产品概述         2.产品特点poA嘉泰姆
3.应用范围       4.下载产品资料PDF文档 poA嘉泰姆
5.产品封装图                     6.电路原理图             poA嘉泰姆
7.功能概述       8.相关产品poA嘉泰姆

一,产品概述(General Description) poA嘉泰姆

The CXSD62104 integrates dual step-down, constant-ontime, synchronouspoA嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) andpoA嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWMpoA嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NBpoA嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5VpoA嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulatorspoA嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulatorspoA嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher poA嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its poA嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.poA嘉泰姆
The CXSD62104 provides excellent transient response and accurate DC poA嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), poA嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with poA嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly poA嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modepoA嘉泰姆

maintains the switching frequency above 25KHz, which eliminates noise in audio applications.poA嘉泰姆

The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputpoA嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB poA嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. poA嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge poA嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and poA嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chippoA嘉泰姆

with low quiescent current close to zero.poA嘉泰姆
The CXSD62104 is available in a TQFN4x4-24A package.poA嘉泰姆
二.产品特点(Features)poA嘉泰姆
Wide Input Voltage Range from 6V to 25VpoA嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-poA嘉泰姆
racy Over-TemperaturepoA嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putpoA嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putpoA嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputpoA嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputpoA嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangepoA嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage OutputpoA嘉泰姆
Built-In POR Control Scheme ImplementedpoA嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWMpoA嘉泰姆
(with Selectable Ultrasonic Operation)poA嘉泰姆
Constant-On-Time Control Scheme with FrequencypoA嘉泰姆
Compensation for PWM ModepoA嘉泰姆
Selectable Switching Frequency in PWM ModepoA嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-poA嘉泰姆
Stop for PWM Outputs and LDO OutputspoA嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETpoA嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)poA嘉泰姆
Built-in Power Good Indicators (PWMs)poA嘉泰姆
Independent Enable Inputs (PWMs, LDO)poA嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)poA嘉泰姆

Adjustable Current-Limit Protection (PWMs)poA嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)poA嘉泰姆
Over-Temperature ProtectionpoA嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) packagepoA嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)poA嘉泰姆

三,应用范围 (Applications)poA嘉泰姆

Notebook and Sub-Notebook ComputerspoA嘉泰姆

Portable DevicespoA嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliespoA嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicespoA嘉泰姆
Graphic CardspoA嘉泰姆
Game ConsolespoA嘉泰姆
TelecommunicationspoA嘉泰姆

四.下载产品资料PDF文档 poA嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！poA嘉泰姆

QQ截图20160419174301.jpg poA嘉泰姆

五,产品封装图 (Package)poA嘉泰姆

poA嘉泰姆

六.电路原理图poA嘉泰姆

poA嘉泰姆

七,功能概述poA嘉泰姆

Input Capacitor SelectionpoA嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, selectpoA嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMSpoA嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors arepoA嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-poA嘉泰姆
side MOSFET with very low-impeadance PCB layout. poA嘉泰姆
MOSFET SelectionpoA嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs shouldpoA嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:poA嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFETpoA嘉泰姆
driver will not charge the miller capacitor of this MOSFET.poA嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. ThepoA嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverpoA嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutypoA嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-poA嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerpoA嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFETpoA嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timepoA嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenpoA嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.poA嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitancepoA嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-poA嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given bypoA嘉泰姆
the following equations:poA嘉泰姆
Layout ConsiderationpoA嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.poA嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrosspoA嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionpoA嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,poA嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasiticpoA嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andpoA嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. AndpoA嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction orpoA嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negativepoA嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notpoA嘉泰姆
recommended. Below is a checklist for your layout:poA嘉泰姆
Layout Consideration (Cont.)poA嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodespoA嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes aspoA嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.poA嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofpoA嘉泰姆

CXSD62104poA嘉泰姆

八,相关产品 更多同类产品...... poA嘉泰姆

Switching Regulator > Buck ControllerpoA嘉泰姆
Part_No poA嘉泰姆	Package poA嘉泰姆	ArchipoA嘉泰姆 tectupoA嘉泰姆	PhasepoA嘉泰姆	No.ofpoA嘉泰姆 PWMpoA嘉泰姆 OutputpoA嘉泰姆	Output poA嘉泰姆 CurrentpoA嘉泰姆 (A) poA嘉泰姆	InputpoA嘉泰姆 Voltage (V) poA嘉泰姆		ReferencepoA嘉泰姆 VoltagepoA嘉泰姆 (V) poA嘉泰姆	Bias poA嘉泰姆 VoltagepoA嘉泰姆 (V) poA嘉泰姆	QuiescentpoA嘉泰姆 CurrentpoA嘉泰姆 (uA) poA嘉泰姆
Part_No poA嘉泰姆	Package poA嘉泰姆	ArchipoA嘉泰姆 tectupoA嘉泰姆	PhasepoA嘉泰姆	No.ofpoA嘉泰姆 PWMpoA嘉泰姆 OutputpoA嘉泰姆	Output poA嘉泰姆 CurrentpoA嘉泰姆 (A) poA嘉泰姆	minpoA嘉泰姆	maxpoA嘉泰姆	ReferencepoA嘉泰姆 VoltagepoA嘉泰姆 (V) poA嘉泰姆	Bias poA嘉泰姆 VoltagepoA嘉泰姆 (V) poA嘉泰姆	QuiescentpoA嘉泰姆 CurrentpoA嘉泰姆 (uA) poA嘉泰姆
CXSD6273poA嘉泰姆	SOP-14poA嘉泰姆 QSOP-16poA嘉泰姆 QFN4x4-16poA嘉泰姆	VM poA嘉泰姆	1 poA嘉泰姆	1 poA嘉泰姆	30poA嘉泰姆	2.9 poA嘉泰姆	13.2poA嘉泰姆	0.9poA嘉泰姆	12 poA嘉泰姆	8000poA嘉泰姆
CXSD6274poA嘉泰姆	SOP-8poA嘉泰姆	VM poA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	20poA嘉泰姆	2.9 poA嘉泰姆	13.2 poA嘉泰姆	0.8poA嘉泰姆	12poA嘉泰姆	5000poA嘉泰姆
CXSD6274CpoA嘉泰姆	SOP-8poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	20poA嘉泰姆	2.9poA嘉泰姆	13.2poA嘉泰姆	0.8poA嘉泰姆	12poA嘉泰姆	5000poA嘉泰姆
CXSD6275poA嘉泰姆	QFN4x4-24poA嘉泰姆	VMpoA嘉泰姆	2poA嘉泰姆	1poA嘉泰姆	60poA嘉泰姆	3.1poA嘉泰姆	13.2poA嘉泰姆	0.6poA嘉泰姆	12poA嘉泰姆	5000poA嘉泰姆
CXSD6276poA嘉泰姆	SOP-8poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	20poA嘉泰姆	2.2poA嘉泰姆	13.2poA嘉泰姆	0.8poA嘉泰姆	5~12poA嘉泰姆	2100poA嘉泰姆
CXSD6276ApoA嘉泰姆	SOP-8poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	20poA嘉泰姆	2.2poA嘉泰姆	13.2poA嘉泰姆	0.8poA嘉泰姆	5~12poA嘉泰姆	2100poA嘉泰姆
CXSD6277/A/BpoA嘉泰姆	SOP8\|TSSOP8poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	5poA嘉泰姆	5poA嘉泰姆	13.2poA嘉泰姆	1.25\|0.8poA嘉泰姆	5~12poA嘉泰姆	3000poA嘉泰姆
CXSD6278poA嘉泰姆	SOP-8poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	10poA嘉泰姆	3.3poA嘉泰姆	5.5poA嘉泰姆	0.8poA嘉泰姆	5poA嘉泰姆	2100poA嘉泰姆
CXSD6279BpoA嘉泰姆	SOP-14poA嘉泰姆	VM poA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	10poA嘉泰姆	5poA嘉泰姆	13.2poA嘉泰姆	0.8poA嘉泰姆	12poA嘉泰姆	2000poA嘉泰姆
CXSD6280poA嘉泰姆	TSSOP-24poA嘉泰姆 \|QFN5x5-32poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	2poA嘉泰姆	20poA嘉泰姆	5poA嘉泰姆	13.2poA嘉泰姆	0.6poA嘉泰姆	5~12poA嘉泰姆	4000poA嘉泰姆
CXSD6281NpoA嘉泰姆	SOP14poA嘉泰姆 QSOP16poA嘉泰姆 QFN-16poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	30poA嘉泰姆	2.9poA嘉泰姆	13.2poA嘉泰姆	0.9poA嘉泰姆	12poA嘉泰姆	4000poA嘉泰姆
CXSD6282poA嘉泰姆	SOP-14poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	30poA嘉泰姆	2.2poA嘉泰姆	13.2poA嘉泰姆	0.6poA嘉泰姆	12poA嘉泰姆	5000poA嘉泰姆
CXSD6282ApoA嘉泰姆	SOP-14poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	30poA嘉泰姆	2.2poA嘉泰姆	13.2poA嘉泰姆	0.6poA嘉泰姆	12poA嘉泰姆	5000poA嘉泰姆
CXSD6283poA嘉泰姆	SOP-14poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	1poA嘉泰姆	25poA嘉泰姆	2.2poA嘉泰姆	13.2poA嘉泰姆	0.8poA嘉泰姆	12poA嘉泰姆	5000poA嘉泰姆
CXSD6284/ApoA嘉泰姆	LQFP7x7 48poA嘉泰姆 TQFN7x7-48poA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	6poA嘉泰姆	0.015poA嘉泰姆	1.4poA嘉泰姆	6.5poA嘉泰姆	-poA嘉泰姆	5poA嘉泰姆	1800poA嘉泰姆
CXSD6285poA嘉泰姆	TSSOP-24PpoA嘉泰姆	VMpoA嘉泰姆	1poA嘉泰姆	2poA嘉泰姆	20poA嘉泰姆	2.97poA嘉泰姆	5.5poA嘉泰姆	0.8poA嘉泰姆	5~12poA嘉泰姆	5000poA嘉泰姆
poA嘉泰姆

上一篇：两相电压模式和固定频率降压控制器CXSD62103从100kHz到800kHz的可编程脉宽调制开关频率无损耗低边MOSFET Ron电流传感

下一篇：电荷泵CXSD62105笔记本电脑的系统电源脉宽调制控制器集成了双降压恒时同步的脉宽调制控制器

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