CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

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发表时间：2020-04-22浏览次数：183

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

目录hWB嘉泰姆

1.产品概述         2.产品特点hWB嘉泰姆
3.应用范围       4.下载产品资料PDF文档 hWB嘉泰姆
5.产品封装图                     6.电路原理图             hWB嘉泰姆
7.功能概述       8.相关产品hWB嘉泰姆

一,产品概述(General Description) hWB嘉泰姆

The CXSD62104 integrates dual step-down, constant-ontime, synchronoushWB嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) andhWB嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWMhWB嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NBhWB嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5VhWB嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulatorshWB嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulatorshWB嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher hWB嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its hWB嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.hWB嘉泰姆
The CXSD62104 provides excellent transient response and accurate DC hWB嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), hWB嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with hWB嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly hWB嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modehWB嘉泰姆

maintains the switching frequency above 25KHz, which eliminates noise in audio applications.hWB嘉泰姆

The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputhWB嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB hWB嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. hWB嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge hWB嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and hWB嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chiphWB嘉泰姆

with low quiescent current close to zero.hWB嘉泰姆
The CXSD62104 is available in a TQFN4x4-24A package.hWB嘉泰姆
二.产品特点(Features)hWB嘉泰姆
Wide Input Voltage Range from 6V to 25VhWB嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-hWB嘉泰姆
racy Over-TemperaturehWB嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-puthWB嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-puthWB嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputhWB嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputhWB嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangehWB嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage OutputhWB嘉泰姆
Built-In POR Control Scheme ImplementedhWB嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWMhWB嘉泰姆
(with Selectable Ultrasonic Operation)hWB嘉泰姆
Constant-On-Time Control Scheme with FrequencyhWB嘉泰姆
Compensation for PWM ModehWB嘉泰姆
Selectable Switching Frequency in PWM ModehWB嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-hWB嘉泰姆
Stop for PWM Outputs and LDO OutputshWB嘉泰姆
Integrated Bootstrap Forward P-CH MOSFEThWB嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)hWB嘉泰姆
Built-in Power Good Indicators (PWMs)hWB嘉泰姆
Independent Enable Inputs (PWMs, LDO)hWB嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)hWB嘉泰姆

Adjustable Current-Limit Protection (PWMs)hWB嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)hWB嘉泰姆
Over-Temperature ProtectionhWB嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) packagehWB嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)hWB嘉泰姆

三,应用范围 (Applications)hWB嘉泰姆

Notebook and Sub-Notebook ComputershWB嘉泰姆

Portable DeviceshWB嘉泰姆
DDR1, DDR2, and DDR3 Power SupplieshWB嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DeviceshWB嘉泰姆
Graphic CardshWB嘉泰姆
Game ConsoleshWB嘉泰姆
TelecommunicationshWB嘉泰姆

四.下载产品资料PDF文档 hWB嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！hWB嘉泰姆

QQ截图20160419174301.jpg hWB嘉泰姆

五,产品封装图 (Package)hWB嘉泰姆

hWB嘉泰姆

六.电路原理图hWB嘉泰姆

hWB嘉泰姆

七,功能概述hWB嘉泰姆

Input Capacitor SelectionhWB嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, selecthWB嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMShWB嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors arehWB嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-hWB嘉泰姆
side MOSFET with very low-impeadance PCB layout. hWB嘉泰姆
MOSFET SelectionhWB嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs shouldhWB嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:hWB嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFEThWB嘉泰姆
driver will not charge the miller capacitor of this MOSFET.hWB嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. ThehWB嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverhWB嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutyhWB嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-hWB嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerhWB嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFEThWB嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timehWB嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenhWB嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.hWB嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitancehWB嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-hWB嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given byhWB嘉泰姆
the following equations:hWB嘉泰姆
Layout ConsiderationhWB嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.hWB嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrosshWB嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionhWB嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,hWB嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasitichWB嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andhWB嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. AndhWB嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction orhWB嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negativehWB嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are nothWB嘉泰姆
recommended. Below is a checklist for your layout:hWB嘉泰姆
Layout Consideration (Cont.)hWB嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodeshWB嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes ashWB嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.hWB嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofhWB嘉泰姆

CXSD62104hWB嘉泰姆

八,相关产品 更多同类产品...... hWB嘉泰姆

Switching Regulator > Buck ControllerhWB嘉泰姆
Part_No hWB嘉泰姆	Package hWB嘉泰姆	ArchihWB嘉泰姆 tectuhWB嘉泰姆	PhasehWB嘉泰姆	No.ofhWB嘉泰姆 PWMhWB嘉泰姆 OutputhWB嘉泰姆	Output hWB嘉泰姆 CurrenthWB嘉泰姆 (A) hWB嘉泰姆	InputhWB嘉泰姆 Voltage (V) hWB嘉泰姆		ReferencehWB嘉泰姆 VoltagehWB嘉泰姆 (V) hWB嘉泰姆	Bias hWB嘉泰姆 VoltagehWB嘉泰姆 (V) hWB嘉泰姆	QuiescenthWB嘉泰姆 CurrenthWB嘉泰姆 (uA) hWB嘉泰姆
Part_No hWB嘉泰姆	Package hWB嘉泰姆	ArchihWB嘉泰姆 tectuhWB嘉泰姆	PhasehWB嘉泰姆	No.ofhWB嘉泰姆 PWMhWB嘉泰姆 OutputhWB嘉泰姆	Output hWB嘉泰姆 CurrenthWB嘉泰姆 (A) hWB嘉泰姆	minhWB嘉泰姆	maxhWB嘉泰姆	ReferencehWB嘉泰姆 VoltagehWB嘉泰姆 (V) hWB嘉泰姆	Bias hWB嘉泰姆 VoltagehWB嘉泰姆 (V) hWB嘉泰姆	QuiescenthWB嘉泰姆 CurrenthWB嘉泰姆 (uA) hWB嘉泰姆
CXSD6273hWB嘉泰姆	SOP-14hWB嘉泰姆 QSOP-16hWB嘉泰姆 QFN4x4-16hWB嘉泰姆	VM hWB嘉泰姆	1 hWB嘉泰姆	1 hWB嘉泰姆	30hWB嘉泰姆	2.9 hWB嘉泰姆	13.2hWB嘉泰姆	0.9hWB嘉泰姆	12 hWB嘉泰姆	8000hWB嘉泰姆
CXSD6274hWB嘉泰姆	SOP-8hWB嘉泰姆	VM hWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	20hWB嘉泰姆	2.9 hWB嘉泰姆	13.2 hWB嘉泰姆	0.8hWB嘉泰姆	12hWB嘉泰姆	5000hWB嘉泰姆
CXSD6274ChWB嘉泰姆	SOP-8hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	20hWB嘉泰姆	2.9hWB嘉泰姆	13.2hWB嘉泰姆	0.8hWB嘉泰姆	12hWB嘉泰姆	5000hWB嘉泰姆
CXSD6275hWB嘉泰姆	QFN4x4-24hWB嘉泰姆	VMhWB嘉泰姆	2hWB嘉泰姆	1hWB嘉泰姆	60hWB嘉泰姆	3.1hWB嘉泰姆	13.2hWB嘉泰姆	0.6hWB嘉泰姆	12hWB嘉泰姆	5000hWB嘉泰姆
CXSD6276hWB嘉泰姆	SOP-8hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	20hWB嘉泰姆	2.2hWB嘉泰姆	13.2hWB嘉泰姆	0.8hWB嘉泰姆	5~12hWB嘉泰姆	2100hWB嘉泰姆
CXSD6276AhWB嘉泰姆	SOP-8hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	20hWB嘉泰姆	2.2hWB嘉泰姆	13.2hWB嘉泰姆	0.8hWB嘉泰姆	5~12hWB嘉泰姆	2100hWB嘉泰姆
CXSD6277/A/BhWB嘉泰姆	SOP8\|TSSOP8hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	5hWB嘉泰姆	5hWB嘉泰姆	13.2hWB嘉泰姆	1.25\|0.8hWB嘉泰姆	5~12hWB嘉泰姆	3000hWB嘉泰姆
CXSD6278hWB嘉泰姆	SOP-8hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	10hWB嘉泰姆	3.3hWB嘉泰姆	5.5hWB嘉泰姆	0.8hWB嘉泰姆	5hWB嘉泰姆	2100hWB嘉泰姆
CXSD6279BhWB嘉泰姆	SOP-14hWB嘉泰姆	VM hWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	10hWB嘉泰姆	5hWB嘉泰姆	13.2hWB嘉泰姆	0.8hWB嘉泰姆	12hWB嘉泰姆	2000hWB嘉泰姆
CXSD6280hWB嘉泰姆	TSSOP-24hWB嘉泰姆 \|QFN5x5-32hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	2hWB嘉泰姆	20hWB嘉泰姆	5hWB嘉泰姆	13.2hWB嘉泰姆	0.6hWB嘉泰姆	5~12hWB嘉泰姆	4000hWB嘉泰姆
CXSD6281NhWB嘉泰姆	SOP14hWB嘉泰姆 QSOP16hWB嘉泰姆 QFN-16hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	30hWB嘉泰姆	2.9hWB嘉泰姆	13.2hWB嘉泰姆	0.9hWB嘉泰姆	12hWB嘉泰姆	4000hWB嘉泰姆
CXSD6282hWB嘉泰姆	SOP-14hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	30hWB嘉泰姆	2.2hWB嘉泰姆	13.2hWB嘉泰姆	0.6hWB嘉泰姆	12hWB嘉泰姆	5000hWB嘉泰姆
CXSD6282AhWB嘉泰姆	SOP-14hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	30hWB嘉泰姆	2.2hWB嘉泰姆	13.2hWB嘉泰姆	0.6hWB嘉泰姆	12hWB嘉泰姆	5000hWB嘉泰姆
CXSD6283hWB嘉泰姆	SOP-14hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	1hWB嘉泰姆	25hWB嘉泰姆	2.2hWB嘉泰姆	13.2hWB嘉泰姆	0.8hWB嘉泰姆	12hWB嘉泰姆	5000hWB嘉泰姆
CXSD6284/AhWB嘉泰姆	LQFP7x7 48hWB嘉泰姆 TQFN7x7-48hWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	6hWB嘉泰姆	0.015hWB嘉泰姆	1.4hWB嘉泰姆	6.5hWB嘉泰姆	-hWB嘉泰姆	5hWB嘉泰姆	1800hWB嘉泰姆
CXSD6285hWB嘉泰姆	TSSOP-24PhWB嘉泰姆	VMhWB嘉泰姆	1hWB嘉泰姆	2hWB嘉泰姆	20hWB嘉泰姆	2.97hWB嘉泰姆	5.5hWB嘉泰姆	0.8hWB嘉泰姆	5~12hWB嘉泰姆	5000hWB嘉泰姆
hWB嘉泰姆

上一篇：两相电压模式和固定频率降压控制器CXSD62103从100kHz到800kHz的可编程脉宽调制开关频率无损耗低边MOSFET Ron电流传感

下一篇：电荷泵CXSD62105笔记本电脑的系统电源脉宽调制控制器集成了双降压恒时同步的脉宽调制控制器

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