目录EI1嘉泰姆

1.产品概述                       2.产品特点EI1嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 EI1嘉泰姆
5.产品封装图                     6.电路原理图                   EI1嘉泰姆
7.功能概述                        8.相关产品EI1嘉泰姆

一,产品概述(General Description)     EI1嘉泰姆

           The CXSD62100 is a voltage mode, fixed 300kHz witching frequency, synchronous buck converter. The CXSD62100 allows wide input voltage that is either a single 5~12V or two supply voltage(s) for various applications. A power-on-reset (POR) circuit monitors the VCC supply voltage to prevent wrong logic controls. A built-in soft-start circuit prevents the output voltages from overshoot as well as limits the input current. An internal 0.6V temperature-com-pensated reference voltage with high accuracy is de-signed to meet the requirement of low output voltage applications. The CXSD62100 provides excellent output volt-age regulations against load current variation. CXSD62100 is built in remote sense function for applications that re-quire remote sense. (TDFN-10 3mmx3mm Package Only)The controller’s over-current protection monitors the out-put current by using the voltage drop across the RDS (ON) of low-side MOSFET, eliminating the need for a cur-rent sensing resistor that features high efficiency and low cost. In addition, the CXSD62100 also integrates excel-lent protection functions. The over-voltage protection (OVP) , under-voltage protection (UVP). OVP circuit which moni-tors the FB voltage to prevent the PWM output from over voltage, and UVP circuit which monitors the FB voltage to prevent the PWM output from under voltage or short circuit.EI1嘉泰姆
       The CXSD62100 is available in TDFN3x3-10 packagesEI1嘉泰姆
二.产品特点(Features)EI1嘉泰姆

1.）Wide 5V to 12V Supply VoltageEI1嘉泰姆
2.）Power-On-Reset Monitoring on VCCEI1嘉泰姆
3.）Excellent Output Voltage RegulationsEI1嘉泰姆
      - 0.6V Internal ReferenceEI1嘉泰姆
      - ±0.6% Over-Temperature RangeEI1嘉泰姆
4.）Integrated Soft-StartEI1嘉泰姆
5.）Voltage Mode PWM Operation with External CompensationEI1嘉泰姆
6.）Up to 90% Duty Ratio for Fast Transient ResponseEI1嘉泰姆
7.）Constant Switching Frequency - 300kHz ±10%EI1嘉泰姆
8.）Integrated Bootstrap Forward P-CH MOSFETEI1嘉泰姆
9.）50% Under-Voltage ProtectionEI1嘉泰姆
10.）125% Over-Voltage ProtectionEI1嘉泰姆
11.）Adjustable Over-Current Protection ThresholdEI1嘉泰姆
      - Using the RDS(ON) of Low-Side MOSFETEI1嘉泰姆
12.）Shutdown Control by COMPEI1嘉泰姆
13.）Power Good Monitoring (TDFN-10 3mmx3mm Package Only)EI1嘉泰姆
14.）Remote Feedback Sense for Excellent OutputEI1嘉泰姆
15.）Voltage (TDFN-10 3mmx3mm Package Only) TDFN3x3-10 PackageEI1嘉泰姆
16.）Lead Free and Green Devices AvailableEI1嘉泰姆
三,应用范围 (Applications)EI1嘉泰姆

Graphic CardsEI1嘉泰姆
DSL, Switch HUBEI1嘉泰姆
Wireless LanEI1嘉泰姆
Notebook ComputerEI1嘉泰姆
Mother BoardEI1嘉泰姆
LCD Monitor/TVEI1嘉泰姆
四.下载产品资料PDF文档 EI1嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！EI1嘉泰姆

 EI1嘉泰姆

五,产品封装图 (Package)EI1嘉泰姆

EI1嘉泰姆

六.电路原理图EI1嘉泰姆

EI1嘉泰姆
七,功能概述EI1嘉泰姆

Layout ConsiderationEI1嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of theEI1嘉泰姆
regulator. With power devices switching at 300kHz,the resulting current transient will cause voltage spike acrossEI1嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionEI1嘉泰姆
of the PWM MOSFET. Before turn-off, the MOSFET is car-rying the full load current. During turn-off, current stopsEI1嘉泰姆
flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance ofEI1嘉泰姆
the circuit generates a large voltage spike during the switching interval. In general, using short and wide printedEI1嘉泰姆
circuit traces should minimize interconnecting imped ances and the magnitude of voltage spike. And signalEI1嘉泰姆
and power grounds are to be kept separate till combined using ground plane construction or single pointEI1嘉泰姆
grounding. Figure 8. illustrates the layout, with bold lines indicating high current paths; these traces must be shortEI1嘉泰姆
and wide. Components along the bold lines should be placed lose together. Below is a checklist for your layout:EI1嘉泰姆
- Keep the switching nodes (UGATE, LGATE, and PHASE)away from sensitive small signal nodes since theseEI1嘉泰姆
nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.EI1嘉泰姆
- The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide.EI1嘉泰姆
- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-EI1嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.EI1嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closeEI1嘉泰姆
their pins. (For example, place the decoupling ceramiccapacitor near the drain of the high-side MOSFET asEI1嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).EI1嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near theEI1嘉泰姆
loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.EI1嘉泰姆
 The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking.EI1嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.EI1嘉泰姆

八,相关产品                   更多同类产品...... EI1嘉泰姆

共有条评论 用户名: 密码: 验证码: 匿名发表