|
CXSD6282电压模式驱动双N通道mosfet的同步PWM控制器所有的控制监控和保护功能带欠压和过流保护的受控电源输出 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
目录 1.产品概述 2.产品特点 一,产品概述(General Description) The CXSD6282 CXSD6282A is a voltage mode, synchronous PWM controller which 1.)Single 12V Power Supply Required Graphic Cards 需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
五,产品封装图 (Package)  六.电路原理图  七,功能概述 Layout Consideration In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.With power devices switching at 300kHz,the resulting cur-rent transient will cause voltage spike across the i n t e r c o n n e c t i n g impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off, the MOSFET is carrying the full load current. During turn-off, current stops flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike.And signal and power grounds are to be kept separating till combined using the ground plane construction or single point grounding. Figure 10 illustrates the layout, with bold lines indicating high current paths; these traces must be short and wide. Components along the bold lines should be placed lose together. Below is a checklist for your layout: - Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since these nodes are fast moving signals. Therefore,keep traces to these nodes as short as possible. - The traces from the gate drivers to the MOSFETs (UGATE, LGATE) should be short and wide. - Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimizing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node. - Decoupling capacitor, compensation component, the resistor dividers, boot capacitors, and SS capacitors should be close their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET as close as possible. The bulk capacitors are also placed near the drain). - The input capacitor should be near the drain of the upper MOSFET; the output capacitor should be near the loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND. - The drain of the MOSFETs (VIN and PHASE nodes)should be a large plane for heat sinking. 八,相关产品 更多同类产品......
发表评论
| ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
发表时间：2020-04-21浏览次数：183
| 最新信息 |
|---|
| (1.)CXDC6584HV 100V集成M ... (2.)CXSD1018AH 100V低内 ... (3.)CXDC6574HV 120V降压 ... (4.)CXPR7166 单节锂离子/ ... (5.)CXMD32126 双通道H桥 ... (6.)CXMD32108R/S：高性能无 ... (7.)CXLE86143 高功率因数 ... (8.)CXLE8278 高效升压型L ... (9.)CXSU63180 10A非同步 ... (10.)CXLB73269太阳能供电 ... |
| 头条信息 |
|---|
