The CXCP5371 CXCP5371B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications
● VDS = -30V,ID = -4.2A
RDS(ON) < 130mΩ @ VGS=-2.5V
RDS(ON) < 75mΩ @ VGS=-4.5V
RDS(ON) < 65mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
The CXHB6555 CXHB6556A CXHB6556B CXHB6557 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 120 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross -conduction. Propagation delays are matched to simplify use in high frequency applications. It has two versions CXHB6555 CXHB6556A CXHB6556B CXHB6557
